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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
164,364 pcs
|
164364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,097 pcs
|
1097 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
744 pcs
|
744 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
425 pcs
|
425 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ Continuous (Note 1 A) | |
| Continuous Drain Current (Maximum @ Ta) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Body Leakage Forward | |
| Gate-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Maximum Drain Current | |
| Mounting Type | |
| On Resistance (Maximum @ @ 4 A, 10 V) | |
| On Resistance (Maximum @ @ 4.5 V, 10 V) | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Note 1 A) | |
| Power Dissipation (Maximum @ Note 1 c) | |
| Power Dissipation (Maximum @ Ta) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VDS=60 V, VGS=0 V, TJ=125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ Vds = 60 V, Vgs = 0 V) | |
| power-dissipation (Maximum @ Note 1 b) |
The NDT3055L from ON Semiconductor is an N-Channel enhancement mode power field effect transistor utilizing a high cell density DMOS technology. This design minimizes on-state resistance and enhances switching performance, making it suitable for applications requiring high energy pulse withstand capability.
Key electrical specifications include a drain-source voltage of 60V, a continuous drain current of 4A, and a maximum power dissipation of 3W. The on-resistance is as low as 0.100 Ohm at VGS = 10V and 4A. It features low drive requirements, allowing operation directly from logic drivers with a VGS(TH) less than 2V.
This MOSFET is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. It is housed in a widely used surface mount package, specifically the SOT-223-4.
The operating temperature range is -65°C to 150°C. The device is Pb-Free and meets RoHS3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NDT3055L is 60V.
The NDT3055L has a continuous drain current rating of 4A.
The on-resistance (RDS(ON)) of the NDT3055L is a maximum of 100mOhm at 4A drain current and 10V gate-source voltage.
The gate threshold voltage (Vgs(th)) for the NDT3055L is a maximum of 2V at 250µA.
The NDT3055L is available in a SOT-223-4 surface mount package.
The operating and storage temperature range for the NDT3055L is -65°C to 150°C.