| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,794 pcs
|
1794 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
109 pcs
|
109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
48 pcs
|
48 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
38 pcs
|
38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NDT3055 is an N-Channel enhancement mode power MOSFET designed for low voltage applications. It utilizes a high cell density DMOS technology to achieve extremely low on-state resistance and superior switching performance.
Key electrical specifications include a drain-source breakdown voltage of 60V, a continuous drain current of 4A, and a maximum static drain-source on-resistance of 100mOhm at 4A and 10V gate-source voltage. The gate-source voltage range is ±20V, with a gate threshold voltage of 4V maximum at 250µA.
This MOSFET is suitable for applications requiring fast switching, low in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion. It operates within a temperature range of -65°C to 150°C.
The device is housed in a SOT-223-4 surface mount package, offering high power and current handling capability in a widely used form factor. The maximum power dissipation is rated at 1.1W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum continuous drain current is 4A.
The Rds(on) is a maximum of 100mOhm at 4A and 10V.
The operating temperature range is -65°C to 150°C.
The NDT3055 is supplied in a SOT-223-4 surface mount package.