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NDT02N40T1G The ON Semiconductor NDT02N40T1G is an N-Channel MOSFET with a 400V drain-to-source voltage and 400mA continuous drain current. It is supplied in a surface-mount SOT-223 package.
Mfr Part #:

NDT02N40T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDT02N40T1G is an N-Channel MOSFET with a 400V drain-to-source voltage and 400mA continuous drain current. It is supplied in a surface-mount SOT-223 package.
✓ Total Stock: 1,050 pcs
$ Price Range: $0.99

NDT02N40T1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,050 pcs
On Request
1050 pcs On Request 1 On Request On Request 17+ On Request On Request
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NDT02N40T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NDT02N40T1G Description

Short technical summary and product information.

The ON Semiconductor NDT02N40T1G is an N-Channel Power MOSFET designed for various applications. It features a maximum drain-to-source voltage (Vds) of 400V and a continuous drain current (Id) of 400mA at 25°C case temperature.

 

The MOSFET has a maximum on-resistance (Rds On) of 5.5 Ohms at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 220mA. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA.

 

This device is packaged in a SOT-223 (TO-261) surface-mount package, making it suitable for space-constrained designs. It operates within a junction and storage temperature range of -55°C to +150°C. The NDT02N40T1G is Pb-Free and Halogen Free.

 

Key electrical characteristics include an input capacitance (Ciss) of 121 pF at 25V and a gate charge (Qg) of 5.5 nC at 10V. The device is 100% avalanche tested.

NDT02N40T1G Quick Information

Product Type: MOSFET
Canonical Name: NDT02N40T1G N-Channel Power MOSFET
Subcategory: N-Channel

NDT02N40T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NDT02N40T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDT02N40T1G Features

  • 400V drain-to-source voltage rating.
  • 400mA continuous drain current capability.
  • 5.5 Ohm maximum on-resistance.
  • SOT-223 surface-mount package.
  • Pb-Free and Halogen Free construction.

NDT02N40T1G Applications

  • High-voltage switching power supplies
  • Motor control circuits
  • High-voltage electronic switching
  • Compact power management modules

NDT02N40T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NDT02N40T1G MOSFET?

The drain-to-source voltage (Vds) of the NDT02N40T1G is 400V.

What is the continuous drain current for the NDT02N40T1G at 25°C?

The continuous drain current (Id) for the NDT02N40T1G at 25°C is 0.4A.

What is the maximum on-resistance of the NDT02N40T1G?

The maximum on-resistance (Rds On) for the NDT02N40T1G is 5.5 Ohms at 220mA drain current and 10V gate-source voltage.

What package type is the NDT02N40T1G MOSFET supplied in?

The NDT02N40T1G MOSFET is supplied in a SOT-223 (TO-261) surface-mount package.

What is the operating temperature range for the NDT02N40T1G?

The operating junction and storage temperature range for the NDT02N40T1G is -55°C to +150°C.

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