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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,298 pcs
|
1298 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (EAS) | |
| Average Rectified Current (Maximum @ TC < 139 °C) | |
| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current (I_FSM) | |
| Operating Temperature | |
| Power Dissipation (Ptot) | |
| Reverse Leakage Current (IR) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The NDSH50120C is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family, rated for 1200V reverse voltage and 53A continuous forward current. It offers zero reverse recovery time, enabling high-frequency switching with minimal losses.
Key electrical specifications include a maximum forward voltage of 1.75V at 50A and 25°C, a typical capacitance of 3691pF at 1V, and a maximum reverse leakage current of 200µA at 1200V. The device is avalanche rated at 380mJ and can handle non-repetitive surge currents up to 231A.
The diode is housed in a TO-247-2 through-hole package and operates over a junction temperature range of -55°C to +175°C. It is suitable for power switching circuits, SMPS, solar inverters, and UPS applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $17.63 | $17.63 |
| 10+ | $13.21 | $13.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage is 1200V.
The continuous forward current is 53A at case temperature below 135°C, and 50A below 139°C.
No, it has zero reverse recovery time (0 ns typical), characteristic of SiC Schottky diodes.
The maximum forward voltage is 1.75V at 50A and 25°C junction temperature.
It is available in a TO-247-2 through-hole package.