NDSH50120C The NDSH50120C is a 1200V, 53A Silicon Carbide Schottky diode from onsemi in a TO-247-2 through-hole package. It features zero reverse recovery time and high surge current capability.
Mfr Part #:

NDSH50120C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDSH50120C is a 1200V, 53A Silicon Carbide Schottky diode from onsemi in a TO-247-2 through-hole package. It features zero reverse recovery time and high surge current capability.
Total Stock: 3,548 pcs
$ Price Range: $13.21 - $17.63

NDSH50120C Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,250 pcs
2250 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,298 pcs
1298 pcs On Request 1 On Request On Request On Request On Request On Request

NDSH50120C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Energy (EAS)
Average Rectified Current (Maximum @ TC < 139 °C)
Capacitance @ Vr, F
Current
Halogen Free
Mounting Type
Non-Repetitive Peak Forward Surge Current (I_FSM)
Operating Temperature
Power Dissipation (Ptot)
Reverse Leakage Current (IR)
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance Junction-to-Case (RθJC)
Voltage
Voltage - DC Reverse (Vr) (Max)

NDSH50120C Description

Short technical summary and product information.

The NDSH50120C is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family, rated for 1200V reverse voltage and 53A continuous forward current. It offers zero reverse recovery time, enabling high-frequency switching with minimal losses.

 

Key electrical specifications include a maximum forward voltage of 1.75V at 50A and 25°C, a typical capacitance of 3691pF at 1V, and a maximum reverse leakage current of 200µA at 1200V. The device is avalanche rated at 380mJ and can handle non-repetitive surge currents up to 231A.

 

The diode is housed in a TO-247-2 through-hole package and operates over a junction temperature range of -55°C to +175°C. It is suitable for power switching circuits, SMPS, solar inverters, and UPS applications.

NDSH50120C Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: D3
Canonical Name: NDSH50120C Silicon Carbide Schottky Diode, 1200V, 53A, TO-247-2
Subcategory: Single Rectifier Diode

NDSH50120C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NDSH50120C Estimated Pricing

Qty Low High
1+ $17.63 $17.63
10+ $13.21 $13.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDSH50120C Features

  • Zero reverse recovery time for high efficiency.
  • 1200V reverse voltage and 53A forward current.
  • Avalanche rated at 380 mJ for ruggedness.
  • High surge current capacity of 231A.
  • RoHS compliant and halogen free.

NDSH50120C Applications

  • Ideal for SMPS and power switching circuits.
  • Used in solar inverter and UPS systems.
  • Suitable for high-frequency power conversion.

NDSH50120C FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the NDSH50120C?

The maximum repetitive reverse voltage is 1200V.

What is the forward current rating of this diode?

The continuous forward current is 53A at case temperature below 135°C, and 50A below 139°C.

Does the NDSH50120C have reverse recovery time?

No, it has zero reverse recovery time (0 ns typical), characteristic of SiC Schottky diodes.

What is the forward voltage drop at rated current?

The maximum forward voltage is 1.75V at 50A and 25°C junction temperature.

What package is the NDSH50120C available in?

It is available in a TO-247-2 through-hole package.

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