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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Rated | |
| Current | |
| Current Rating (Maximum @ TC < 135 °C) | |
| Current Rating (Maximum @ TC < 149 °C) | |
| Diode Configuration | |
| Ease of Paralleling | |
| Forward Voltage (Maximum @ IF = 20 A, TJ = 25 °C) | |
| Forward Voltage (Typical @ IF = 20 A, TJ = 125 °C) | |
| Forward Voltage (Typical @ IF = 20 A, TJ = 175 °C) | |
| Halogen Free | |
| High Surge Current Capacity | |
| Industrial Grade | |
| Max Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| No Reverse Recovery / No Forward Recovery | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Peak Repetitive Reverse Voltage | |
| Positive Temperature Coefficient | |
| Power Dissipation (Maximum @ TC = 150 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Reverse Current (Maximum @ VR = 1200 V, TJ = 25 °C) | |
| Reverse Current (Typical @ VR = 1200 V, TJ = 125 °C) | |
| Reverse Recovery Time (trr) | |
| Single Pulse Avalanche Energy | |
| Speed | |
| Supplier Device Package | |
| Surge Current (Maximum @ Half-Sine Pulse, tp = 8.3 ms) | |
| Surge Current (Maximum @ TC = 150 °C, 10 µs) | |
| Surge Current (Maximum @ TC = 25 °C, 10 µs) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage |
The On Semiconductor NDSH40120CDN is a Silicon Carbide (SiC) Schottky Diode designed for high-performance power applications. It offers superior switching performance and reliability compared to traditional silicon diodes, featuring no reverse recovery current and temperature-independent switching characteristics.
Key electrical specifications include a peak repetitive reverse voltage of 1200V and a continuous rectified forward current of 40A at 149°C. The diode exhibits a maximum forward voltage of 1.75V at 20A and 25°C, with a typical reverse current of 200µA at 1200V and 25°C. Its thermal characteristics include a junction-to-case thermal resistance of 0.39°C/W per device.
This SiC Schottky diode is housed in a TO-247-3 package, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C. System benefits include high efficiency, faster operating frequency, increased power density, and reduced EMI.
Applications for the NDSH40120CDN include general-purpose use, Switched-Mode Power Supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS). Its design facilitates paralleling and offers high surge current capacity.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.44 | $11.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 1200 V.
The continuous rectified forward current is 40 A at temperatures below 149°C.
The maximum forward voltage is 1.75 V at 20 A and 25°C.
No, this diode has no reverse recovery time.
The diode is supplied in a TO-247-3 package.
The operating temperature range is -55°C to 175°C.
Yes, this device is RoHS3 Compliant.