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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (EAS) | |
| Capacitance @ Vr, F | |
| Capacitive Charge (QC) @ V=800V | |
| Current | |
| Forward Current If (Maximum @ TC < 149 °C) | |
| Forward Voltage Vf (Typical @ IF=20 A, TJ=125 °C) | |
| Forward Voltage Vf (Typical @ IF=20 A, TJ=175 °C) | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse, tp=8.3ms) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=150 °C, 10 µs pulse) | |
| Non-Repetitive Peak Forward Surge Current (Maximum @ TC=25 °C, 10 µs pulse) | |
| Operating Temperature | |
| Power Dissipation (Ptot) (Maximum @ TC=150 °C) | |
| Power Dissipation (Ptot) (Maximum @ TC=25 °C) | |
| Repetitive Forward Surge Current (Half-Sine Pulse, tp=8.3ms) | |
| Reverse Current Ir (Typical/Maximum @ VR=1200 V, TJ=125 °C) | |
| Reverse Current Ir (Typical/Maximum @ VR=1200 V, TJ=175 °C) | |
| Reverse Current Ir (Typical/Maximum @ VR=1200 V, TJ=25 °C) | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Vrrm) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Voltage |
The NDSH20120C is a 1200V Silicon Carbide (SiC) Schottky diode by ON Semiconductor rated for 20 A continuous forward current at case temperature below 149°C (26 A at TC<135°C). It offers zero reverse recovery and temperature-independent switching, enabling high efficiency in power conversion systems.
Key electrical characteristics include a typical forward voltage of 1.38 V at 20 A and 25°C (max 1.75 V), reverse leakage current of 2.06 µA typical at 1200 V and 25°C, and a non-repetitive peak forward surge current of 896 A (10 µs pulse). The diode is avalanche rated at 166 mJ and has a junction-to-case thermal resistance of 0.7°C/W.
The device is housed in a through-hole TO-247-2LD package (CASE 340DA) and is RoHS compliant and halogen-free. Typical applications include switch-mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and general power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.20 | $11.20 |
| 10+ | $7.83 | $7.83 |
| 120+ | $5.70 | $5.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
20 A at case temperature <149°C and 26 A at case temperature <135°C.
Typical 1.38 V, maximum 1.75 V.
0 ns (zero reverse recovery due to SiC Schottky technology).
TO-247-2LD (CASE 340DA).