NDSH10170A Silicon Carbide (SiC) Schottky diode rated at 1700V peak repetitive reverse voltage and 16A forward current. Zero reverse recovery time.
Mfr Part #:

NDSH10170A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Silicon Carbide (SiC) Schottky diode rated at 1700V peak repetitive reverse voltage and 16A forward current. Zero reverse recovery time.
Total Stock: 900 pcs
$ Price Range: $7.88 - $11.20

NDSH10170A Available from 1 distributor

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NDSH10170A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Capacitance @ Vr, F
Case Code
Current
Forward Current (Nominal @ TC<157 °C)
Forward Voltage (Typical @ IF=10 A, TJ=125 °C)
Forward Voltage (Typical @ IF=10 A, TJ=175 °C)
Halogen Free
Junction Temperature
Mounting Type
Non-Repetitive Peak Forward Surge Current
Operating Temperature
Peak Repetitive Reverse Voltage
Power Dissipation (Maximum @ TC = 150 °C)
Power Dissipation (Maximum @ TC=25 °C)
Reverse Current (Typical/Maximum @ VR=1700 V, TJ=125 °C)
Reverse Current (Typical/Maximum @ VR=1700 V, TJ=175 °C)
Reverse Current (Typical/Maximum @ VR=1700 V, TJ=25 °C)
Reverse Recovery Time (trr)
Single Pulse Avalanche Energy
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Capacitive Charge
Voltage

NDSH10170A Description

Short technical summary and product information.

The NDSH10170A is a Silicon Carbide (SiC) Schottky diode from onsemi's EliteSiC family. It offers a peak repetitive reverse voltage of 1700 V and a continuous forward current of 16 A at case temperatures below 135°C (10 A at TC<157°C). The diode features zero reverse recovery time (0 ns), enabling high-frequency switching with minimal losses. Typical forward voltage is 1.50 V at 10 A and 25°C, with a maximum of 1.75 V. Reverse leakage current is extremely low at 0.09 µA typical (40 µA max) at 25°C. The device is avalanche rated at 156 mJ and can handle non-repetitive peak surge currents up to 868 A (10 µs pulse). It is housed in a TO-247-2L package (Case 340DA) with through-hole mounting. The junction temperature range is -55°C to 175°C. The diode is halogen-free and RoHS compliant.

NDSH10170A Quick Information

Product Type: SiC Schottky Diode
Canonical Name: Silicon Carbide (SiC) Schottky Diode, 10 A, 1700 V, TO-247-2L
Subcategory: Rectifier Diode

NDSH10170A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NDSH10170A Estimated Pricing

Qty Low High
1+ $11.20 $11.20
10+ $7.88 $7.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDSH10170A Features

  • 1700V peak repetitive reverse voltage.
  • 16A continuous forward current at TC<135°C.
  • Zero reverse recovery time (0 ns).
  • Avalanche rated at 156 mJ.
  • Halogen-free and RoHS compliant.

NDSH10170A Applications

  • Used in switch-mode power supplies (SMPS).
  • Ideal for solar inverter circuits.
  • Suitable for UPS power switching.
  • Used in power switching circuits.

NDSH10170A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak repetitive reverse voltage of the NDSH10170A?

1700 V.

What is the forward current rating?

16 A continuous at case temperature below 135°C; 10 A at TC<157°C.

What is the reverse recovery time?

0 ns (zero reverse recovery).

What package is the NDSH10170A available in?

TO-247-2L (Case 340DA), through-hole mounting.

What is the operating junction temperature range?

-55°C to 175°C.

Is the NDSH10170A RoHS compliant?

Yes, it is RoHS compliant and halogen-free.

What is the typical forward voltage at 10 A and 25°C?

1.50 V typical, 1.75 V maximum.

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