| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| FET Feature | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Typical @ VDS = VGS, ID = 250 µA) | |
| Gate Threshold Voltage (Typical @ VDS = VGS, ID = 250 µA, TA = 125 °C) | |
| Gate-Body Leakage Forward | |
| Gate-Body Leakage, Reverse | |
| Gate-Drain Charge | |
| Gate-Source Charge | |
| Gate-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| On-State Drain Current | |
| Operating and Storage Temperature Range | |
| Output Capacitance | |
| Power | |
| Power Dissipation (@ Dual Operation) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Static Drain Source On Resistance (Typical @ VGS = 10 V, ID = 2.6 A) | |
| Static Drain Source On Resistance (Typical @ VGS = 10 V, ID = 2.6 A, TA = 125 °C) | |
| Static Drain Source On Resistance (Typical @ VGS = 4.5 V, ID = 2.1 A) | |
| Static Drain Source On Resistance (Typical @ VGS = 4.5 V, ID = 2.1 A, TA = 125 °C) | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Gate Charge | |
| Turn-Off Delay Time | |
| Turn-Off Fall Time | |
| Turn-On Delay Time | |
| Turn-On Rise Time | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The ON Semiconductor NDS9957 is a dual N-channel enhancement mode field-effect transistor. It is manufactured using a high cell density DMOS technology, tailored to minimize on-state resistance and provide superior switching performance.
Key electrical specifications include a drain-source voltage of 60V and a continuous drain current of 2.6A. The Rds(on) is 0.16 Ohms at a gate-source voltage of 10V and a drain current of 2.6A. The gate threshold voltage is typically 1.5V. Switching characteristics include a turn-on delay time of 6ns and a turn-off delay time of 17ns.
This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. It offers high power and current handling capability in a widely used surface mount package.
The NDS9957 comes in an 8-SOIC package and is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The continuous drain current is 2.6A.
The Rds(on) is 0.16 Ohms at 2.6A and 10V Vgs.
The package type is 8-SOIC.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.