| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NDS9956A is a Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It is designed using a high cell density DMOS technology, which optimizes on-state resistance and switching performance.
Key electrical specifications include a drain-source voltage of 30V and a continuous drain current of 3.7A. The static drain-source on-resistance (RDS(ON)) is a maximum of 80mOhm at a gate-source voltage of 10V and a drain current of 2.2A. The gate threshold voltage (VGS(th)) is a maximum of 2.8V at 250µA. Switching characteristics include a turn-on delay time of up to 20ns and a turn-off delay time of up to 50ns.
This MOSFET is particularly suited for low-voltage applications such as DC/DC conversion and DC motor control, where fast switching, low in-line power loss, and resistance to transients are important. It offers high power and current handling capabilities in a widely used surface mount package.
The device operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, requiring surface mount installation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NDS9956A is 30V.
The NDS9956A MOSFET has a continuous drain current of 3.7A.
The NDS9956A has a maximum static drain-source on-resistance of 80mOhm at 10Vgs and 2.2A.
The operating and storage temperature range for the NDS9956A is -55°C to 150°C.
The NDS9956A MOSFET is supplied in an 8-SOIC package.
The NDS9956A is listed as RoHS3 Compliant.