| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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105 pcs
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105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NDS9955 is a Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by Texas Instruments. It is designed for high-density cell applications, offering extremely low Rds(on) and high power and current handling capabilities.
Key electrical specifications include a drain-source voltage of 50V and a continuous drain current of 3A. The static drain-source on-resistance is as low as 0.130 Ω at VGS = 10V. It also features a gate threshold voltage typically around 1.7V.
This MOSFET is housed in a surface-mount 8-SOIC package. Its design is particularly suited for low-voltage applications such as disk drive motor control and battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are critical.
Thermal characteristics include a junction-to-ambient thermal resistance of 78 °C/W and a junction-to-case thermal resistance of 40 °C/W. The operating and storage temperature range is -55 to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the NDS9955 is 50V.
The NDS9955 has a continuous drain current rating of 3A.
The typical Rds(on) for the NDS9955 at Vgs = 10V and Id = 3A is 0.130 Ω.
The NDS9955 is available in an 8-SOIC surface mount package.
The operating and storage temperature range for the NDS9955 is -55 to 150 °C.