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NDS9955 The ON Semiconductor NDS9955 is a dual N-channel MOSFET designed for high-density cell applications. It features a 50V drain-source voltage and 3A continuous drain current.
Mfr Part #:

NDS9955

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDS9955 is a dual N-channel MOSFET designed for high-density cell applications. It features a 50V drain-source voltage and 3A continuous drain current.
✓ Total Stock: 31 pcs
$ Price Range: $0.99

NDS9955 Available from 1 distributor

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NDS9955 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NDS9955 Description

Short technical summary and product information.

The NDS9955 from ON Semiconductor is a dual N-channel enhancement mode MOSFET. It utilizes a high-density cell design for extremely low on-state resistance (RDS(ON)), making it suitable for applications requiring efficient power handling.

 

Key electrical specifications include a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 3A. The static drain-source on-resistance (RDS(ON)) is rated at a maximum of 130mOhm at 3A and 10V Vgs. The gate threshold voltage (Vgs(th)) is typically 1.7V at 250µA.

 

This MOSFET is designed for high power and current handling capabilities within a widely used surface mount package. Its technology is tailored for superior switching performance and minimizing on-state power loss, making it ideal for low-voltage applications such as disk drive motor control and battery-powered circuits where fast switching and resistance to transients are important.

 

The device is housed in an 8-SOIC package, a common surface mount form factor. The mounting type is surface mount, requiring appropriate soldering techniques for reliable integration into electronic designs.

NDS9955 Quick Information

Product Type: MOSFET
Canonical Name: NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor
Subcategory: Dual N-Channel

NDS9955 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS9955 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS9955 Features

  • Dual N-Channel enhancement mode MOSFET.
  • 50V drain-source voltage rating.
  • 3A continuous drain current capability.
  • Low on-state resistance (RDS(ON)).
  • Surface mount 8-SOIC package.

NDS9955 Applications

  • Suitable for low-voltage applications.
  • Ideal for disk drive motor control.
  • Used in battery-powered circuits.
  • Provides efficient power switching.

NDS9955 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NDS9955?

The maximum drain-source voltage (Vdss) for the NDS9955 is 50V.

What is the continuous drain current rating of the NDS9955?

The NDS9955 has a continuous drain current rating of 3A.

What is the maximum on-resistance (RDS(ON)) for the NDS9955?

The maximum on-resistance (RDS(ON)) for the NDS9955 is 130mOhm at 3A and 10V Vgs.

What package type is the NDS9955 available in?

The NDS9955 is available in an 8-SOIC package.

What is the operating temperature range for the NDS9955?

The operating and storage temperature range for the NDS9955 is -55°C to 150°C.

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