NDS9953A The NDS9953A is a dual P-channel enhancement mode power MOSFET from ON Semiconductor. It features a surface mount SOIC-8 package and is designed for low voltage applications.
Mfr Part #:

NDS9953A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS9953A is a dual P-channel enhancement mode power MOSFET from ON Semiconductor. It features a surface mount SOIC-8 package and is designed for low voltage applications.
✓ Total Stock: 2,453 pcs
$ Price Range: $0.99

NDS9953A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,453 pcs
2453 pcs On Request 1 On Request On Request 11+ On Request On Request

NDS9953A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NDS9953A Description

Short technical summary and product information.

The ON Semiconductor NDS9953A is a dual P-channel enhancement mode power MOSFET. It utilizes a high-density DMOS technology for minimized on-state resistance and superior switching performance. This device is particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching and low power loss.

 

Key electrical characteristics include a drain-source voltage of 30V, a continuous drain current of 2.9A, and a typical static drain-source on-resistance of 0.13 Ohms at 1A and 10V. The gate charge is typically 25nC at 10V, and the gate threshold voltage is a maximum of -2.8V at 250µA.

 

The NDS9953A is housed in a standard 8-pin SOIC surface mount package, facilitating integration into compact designs. Its operating temperature range is -55°C to 150°C (TJ). The device offers high power and current handling capabilities within its widely used surface mount package.

NDS9953A Quick Information

Product Type: MOSFET
Canonical Name: NDS9953A Dual P-channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS9953A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free Compliant

NDS9953A Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS9953A Features

  • Dual P-channel enhancement mode MOSFET.
  • Low on-state resistance (RDS(ON)).
  • High power and current handling.
  • Surface mount SOIC-8 package.
  • Suitable for low voltage applications.

NDS9953A Applications

  • Notebook computer power management.
  • Battery powered circuit applications.
  • Low voltage power switching.
  • Fast switching applications.

NDS9953A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the NDS9953A?

The drain-source voltage rating for the NDS9953A is 30V.

What is the continuous drain current for the NDS9953A?

The continuous drain current for the NDS9953A is 2.9A.

What is the typical Rds(on) for the NDS9953A?

The typical Rds(on) for the NDS9953A is 0.13 Ohms at 1A and 10V.

What is the operating temperature range of the NDS9953A?

The operating temperature range for the NDS9953A is -55°C to 150°C (TJ).

What package type is the NDS9953A available in?

The NDS9953A is available in an 8-pin SOIC surface mount package.

Is the NDS9953A RoHS compliant?

Yes, the NDS9953A is RoHS3 Compliant.

Home
Account

Categories