| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,787 pcs
|
4787 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDS9430 is a P-Channel MOSFET from On Semiconductor, utilizing their advanced PowerTrench process. This device is optimized for power management applications and offers a wide range of gate drive voltage ratings from 4.5V to 20V.
Key electrical characteristics include a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.3A at 25°C. The static drain-source on-resistance (Rds(on)) is rated at a maximum of 60mOhm at 5.3A and 10V gate-source voltage. It also features a low gate charge (Qg) of 10 nC and fast switching speeds.
This MOSFET is housed in a surface-mount 8-SOIC package, measuring 0.154" (3.90mm) in width. The operating temperature range is -55°C to 175°C (TJ). Applications include power management, load switching, and battery protection.
With its high performance trench technology, the NDS9430 provides extremely low Rds(on) and high power and current handling capabilities, making it suitable for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NDS9430 MOSFET is 30V.
The continuous drain current for the NDS9430 is 5.3A.
The Rds(on) of the NDS9430 is 60mOhm at a drain current of 5.3A and gate-source voltage of 10V.
The operating and storage junction temperature range for the NDS9430 is -55°C to 175°C.
The NDS9430 MOSFET is supplied in an 8-SOIC package.