| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,290 pcs
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7290 pcs | On Request | 1 | On Request | On Request | 9606 | On Request | On Request |
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The NDS9400A from Texas Instruments is a P-Channel Enhancement Mode Field Effect Transistor utilizing a high cell density DMOS technology. This technology is optimized for low on-state resistance and superior switching performance, making it suitable for low-voltage applications like notebook computer power management and battery-powered circuits.
Key electrical characteristics include a drain-source voltage of -30V, a continuous drain current of ±3.4A, and a pulsed drain current of ±10A. The static drain-source on-resistance is as low as 0.13 Ohms at a gate-source voltage of -10V. The device operates within a temperature range of -55 to 150°C.
This transistor is housed in a surface mount package, identified as NDS9400A.SAM. Its design is particularly suited for applications requiring fast switching, low in-line power loss, and resistance to transients. The high power and current handling capability in a widely used surface mount package make it a reliable choice for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
±3.4A
0.13 Ohms
-55 to 150°C
Surface Mount
RoHS3 Compliant
1 Unlimited