NDS9400A The NDS9400A is a P-Channel MOSFET from On Semiconductor designed for low voltage applications. It features a 30V drain-source voltage and 3.4A continuous current.
Mfr Part #:

NDS9400A

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS9400A is a P-Channel MOSFET from On Semiconductor designed for low voltage applications. It features a 30V drain-source voltage and 3.4A continuous current.
✓ Total Stock: 8,000 pcs
$ Price Range: $0.99

NDS9400A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 03+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

NDS9400A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS9400A Description

Short technical summary and product information.

The NDS9400A is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor using a high cell density DMOS technology. This technology is optimized for low on-state resistance and superior switching performance, making it suitable for low voltage applications such as notebook computer power management and battery-powered circuits.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 30V and a continuous drain current of 3.4A at 25°C. The static drain-source on-resistance (Rds(on)) is a maximum of 0.13 Ohms at 1A and 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.8V at 250µA. Switching characteristics are also notable, with turn-on delay time of 9ns and turn-off fall time of 8ns.

 

This MOSFET is housed in a standard 8-SOIC surface mount package. It operates within a temperature range of -55°C to 150°C. The device offers high power and current handling capabilities in a widely used surface mount package, providing a rugged and reliable solution for various power management needs.

NDS9400A Quick Information

Product Type: MOSFET
Canonical Name: NDS9400A P-Channel Enhancement Mode MOSFET
Subcategory: P-Channel

NDS9400A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS9400A Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS9400A Features

  • P-Channel enhancement mode MOSFET.
  • 30V drain-source voltage rating.
  • 3.4A continuous drain current.
  • Low Rds(on) of 0.13 Ohm.
  • 8-SOIC surface mount package.

NDS9400A Applications

  • Suitable for low voltage applications.
  • Used in notebook computer power management.
  • Ideal for battery-powered circuits.
  • Provides fast switching performance.
  • Offers low in-line power loss.

NDS9400A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDS9400A?

The drain-source voltage (Vdss) for the NDS9400A is 30V.

What is the continuous drain current of the NDS9400A?

The continuous drain current for the NDS9400A is 3.4A.

What is the maximum Rds(on) for the NDS9400A?

The maximum Rds(on) is 0.13 Ohms when measured at 1A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to 150°C.

What package type is the NDS9400A available in?

The NDS9400A is available in an 8-SOIC surface mount package.

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