NDS8947 The NDS8947 is a dual P-Channel enhancement mode MOSFET from On Semiconductor. It features a surface mount package and is designed for low voltage applications.
Mfr Part #:

NDS8947

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS8947 is a dual P-Channel enhancement mode MOSFET from On Semiconductor. It features a surface mount package and is designed for low voltage applications.
✓ Total Stock: 1,115 pcs
$ Price Range: $0.99

NDS8947 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,115 pcs
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NDS8947 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NDS8947 Description

Short technical summary and product information.

The NDS8947 is a dual P-Channel enhancement mode power field-effect transistor manufactured by On Semiconductor. It utilizes a high cell density DMOS technology for minimized on-state resistance and superior switching performance. This device is particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching, low in-line power loss, and transient resistance.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 30V, a continuous drain current (ID) of 4A, and a maximum static drain-source on-resistance (Rds On) of 65mOhm at 4A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.8V at 250µA. The total gate charge (Qg) is a maximum of 30nC at 10V, and the input capacitance (Ciss) is 690pF at 15V.

 

This MOSFET array is housed in an 8-SOIC surface mount package. The operating temperature range is -55°C to 150°C (TJ). Its technology is MOSFET (Metal Oxide) with a logic level gate feature, making it suitable for various power management tasks in portable electronics.

NDS8947 Quick Information

Product Type: MOSFET Array
Canonical Name: NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS8947 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS8947 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS8947 Features

  • Dual P-Channel enhancement mode MOSFET.
  • 30V drain-source voltage rating.
  • 4A continuous drain current.
  • Low Rds(on) of 65mOhm.
  • 8-SOIC surface mount package.

NDS8947 Applications

  • Notebook computer power management.
  • Battery powered circuit applications.
  • Low voltage power switching.
  • Efficient power management tasks.

NDS8947 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDS8947?

The drain-source voltage (Vdss) for the NDS8947 is 30V.

What is the continuous drain current of the NDS8947?

The NDS8947 has a continuous drain current of 4A.

What is the Rds On for the NDS8947?

The Rds On is a maximum of 65mOhm at 4A and 10V.

What is the operating temperature range of the NDS8947?

The operating temperature range for the NDS8947 is -55°C to 150°C.

What type of package is the NDS8947 in?

The NDS8947 is in an 8-SOIC surface mount package.

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