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NDS8936 The NDS8936 is a dual N-Channel enhancement mode MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 5.3A continuous current capability.
Mfr Part #:

NDS8936

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS8936 is a dual N-Channel enhancement mode MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 5.3A continuous current capability.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NDS8936 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NDS8936 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NDS8936 Description

Short technical summary and product information.

The NDS8936 is a dual N-Channel enhancement mode power field-effect transistor manufactured by ON Semiconductor using a high cell density DMOS technology. This technology is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low-voltage applications like notebook computer power management and battery-powered circuits.

 

Key electrical specifications include a 30V drain-source breakdown voltage (VDSS) and a continuous drain current of 5.3A. The static drain-source on-resistance (RDS(ON)) is a maximum of 35mOhm at 5.3A and 10V VGS. The gate threshold voltage (VGS(th)) is a maximum of 2.8V at 250µA. Input capacitance (Ciss) is 720pF at 15V.

 

This MOSFET is housed in a surface mountable 8-SOIC package. It operates within a temperature range of -55°C to 150°C (TJ). The device offers high power and current handling capabilities in a widely used surface mount package, making it a versatile component for power management solutions.

NDS8936 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel

NDS8936 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS8936 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS8936 Features

  • Dual N-Channel enhancement mode MOSFET.
  • 30V drain-source breakdown voltage.
  • 5.3A continuous drain current.
  • Low Rds(on) of 35mOhm at 10V VGS.
  • Surface mountable 8-SOIC package.

NDS8936 Applications

  • Notebook computer power management.
  • Battery-powered circuit applications.
  • Low voltage power supply circuits.
  • Switching power supply applications.

NDS8936 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the NDS8936?

The drain-source breakdown voltage (VDSS) for the NDS8936 is 30V.

What is the continuous drain current of the NDS8936 MOSFET?

The NDS8936 MOSFET has a continuous drain current of 5.3A.

What is the maximum Rds(on) for the NDS8936 at 10V VGS?

The maximum Rds(on) for the NDS8936 at 5.3A and 10V VGS is 35mOhm.

What is the operating temperature range for the NDS8936?

The NDS8936 operates between -55°C and 150°C (TJ).

What package type is the NDS8936 MOSFET supplied in?

The NDS8936 is supplied in an 8-SOIC package.

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