NDS8858H The NDS8858H from On Semiconductor is a complementary N-channel and P-channel MOSFET half bridge. It features a 30V drain-source voltage and a surface mount package.
Mfr Part #:

NDS8858H

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS8858H from On Semiconductor is a complementary N-channel and P-channel MOSFET half bridge. It features a 30V drain-source voltage and a surface mount package.
✓ Total Stock: 5,918 pcs
$ Price Range: $0.99

NDS8858H Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,839 pcs
5839 pcs On Request 1 On Request On Request 04+ On Request On Request
Non-Authorised Inventory information
79 pcs
79 pcs On Request 1 On Request On Request On Request On Request On Request

NDS8858H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

NDS8858H Description

Short technical summary and product information.

The NDS8858H is a complementary MOSFET half bridge from On Semiconductor, utilizing Fairchild's proprietary high cell density DMOS technology. This technology is optimized for low on-state resistance and superior switching performance, making it suitable for low voltage half bridge applications or CMOS applications where gates are connected.

 

This device offers a 30V drain-source voltage for the N-channel and -30V for the P-channel. The continuous drain current is rated at 6.3A for the N-channel and -4.8A for the P-channel. Key electrical characteristics include a maximum static drain-source on-resistance of 0.035 Ohms at 4.8A and 10V for the N-channel, and 0.065 Ohms at -4.8A and -10V for the P-channel. Input capacitance is typically 720pF for the N-channel and 690pF for the P-channel.

 

The NDS8858H operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC surface mount package, measuring 0.154 inches (3.90mm) in width. The device is designed for high power and current handling capabilities in a widely used surface mount format.

NDS8858H Quick Information

Product Type: MOSFET
Canonical Name: NDS8858H Complementary MOSFET Half Bridge
Subcategory: Complementary MOSFET Half Bridge

NDS8858H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS8858H Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS8858H Features

  • Complementary N-channel and P-channel MOSFETs.
  • 30V drain-source voltage rating.
  • Low on-resistance (0.035 Ohm typical).
  • Surface mount 8-SOIC package.
  • Wide operating temperature range.

NDS8858H Applications

  • Suitable for low voltage switching circuits
  • Ideal for power management applications
  • Used in automotive and consumer electronics
  • Applicable in high-speed switching designs

NDS8858H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDS8858H?

The drain-source voltage is 30V for the N-channel and -30V for the P-channel.

What is the continuous drain current of the NDS8858H?

The continuous drain current is 6.3A for the N-channel and -4.8A for the P-channel.

What is the maximum on-resistance for the NDS8858H?

The maximum on-resistance is 0.035 Ohms at 4.8A and 10V for the N-channel, and 0.065 Ohms at -4.8A and -10V for the P-channel.

What is the operating temperature range for the NDS8858H?

The operating temperature range is -55°C to 150°C.

What package type is the NDS8858H available in?

The NDS8858H is available in an 8-SOIC surface mount package.

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