| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,333 pcs
|
34333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,312 pcs
|
1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 1210/1325/0602 | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDS356AP is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by ON Semiconductor. It utilizes a high cell density DMOS technology for minimized on-state resistance, making it suitable for low voltage applications such as notebook computer power management and portable electronics.
Key electrical characteristics include a Drain-Source Voltage (Vdss) of 30V and a continuous drain current of 1.1A at 25°C ambient temperature. The static drain-source on-resistance (Rds On) is a maximum of 200mOhm at 1.3A and 10V gate-source voltage. The input capacitance (Ciss) is 280 pF at 10V, and the total gate charge (Qg) is a maximum of 4.4 nC at 5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 surface mount package, offering superior thermal and electrical capabilities. The device is designed for applications requiring fast high-side switching and low in-line power loss.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The NDS356AP is ideal for battery-powered circuits and other portable electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vdss) is 30V.
The maximum continuous drain current is 1.1A.
The operating temperature range is -55°C to 150°C.
The NDS356AP is available in a SOT-23-3 surface mount package.
The maximum on-resistance is 200mOhm at 1.3A and 10V.
The total gate charge is a maximum of 4.4 nC at 5V.