NDS352P The NDS352P is a P-Channel MOSFET from On Semiconductor designed for low voltage applications. It features a 20V drain-source voltage and 850mA continuous current capability.
Mfr Part #:

NDS352P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS352P is a P-Channel MOSFET from On Semiconductor designed for low voltage applications. It features a 20V drain-source voltage and 850mA continuous current capability.
✓ Total Stock: 635 pcs
$ Price Range: $0.99

NDS352P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
635 pcs
635 pcs On Request 1 On Request On Request On Request On Request On Request

NDS352P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS352P Description

Short technical summary and product information.

The NDS352P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It utilizes a high cell density DMOS technology optimized for low on-state resistance, making it suitable for low voltage applications such as notebook computer power management and portable electronics.

 

Key electrical specifications include a drain-source breakdown voltage of 20V and a continuous drain current of 850mA at 25°C ambient temperature. The static drain-source on-resistance is a maximum of 350mOhm at 1A drain current and 10V gate-source voltage. The input capacitance is 125pF and the total gate charge is 4nC.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact, industry-standard SOT-23-3 surface mount package, offering superior thermal and electrical capabilities due to its copper lead frame design.

 

The NDS352P is designed for applications requiring fast high-side switching and low in-line power loss in small outline surface mount packages.

NDS352P Quick Information

Product Type: MOSFET Transistor
Canonical Name: NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS352P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS352P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS352P Features

  • P-Channel logic level enhancement mode MOSFET.
  • 20V drain-source breakdown voltage.
  • 850mA continuous drain current.
  • Low on-resistance: 350mOhm max @ 1A, 10V.
  • Compact SOT-23-3 surface mount package.

NDS352P Applications

  • Notebook computer power management.
  • Portable electronic devices.
  • Battery powered circuits.
  • Low voltage switching applications.

NDS352P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the NDS352P?

The maximum drain-source voltage is -20V.

What is the maximum gate-source voltage for the NDS352P?

The maximum gate-source voltage is ±12V.

What is the maximum continuous drain current of the NDS352P?

The maximum continuous drain current is 850mA.

What package does the NDS352P come in?

It comes in a SOT-23 package.

What is the operating temperature range of the NDS352P?

-55°C to 150°C.

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