NDS352AP The ON Semiconductor NDS352AP is a P-Channel MOSFET designed for low voltage applications. It features a 30V drain-source voltage and 900mA continuous drain current.
Mfr Part #:

NDS352AP

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDS352AP is a P-Channel MOSFET designed for low voltage applications. It features a 30V drain-source voltage and 900mA continuous drain current.
✓ Total Stock: 95,757 pcs
$ Price Range: $0.99

NDS352AP Available from 8 distributors

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✓ Non-Authorised

NDS352AP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS352AP Description

Short technical summary and product information.

The ON Semiconductor NDS352AP is a P-Channel logic-level enhancement mode power MOSFET. It utilizes a high cell density DMOS technology to minimize on-state resistance, making it suitable for low voltage applications such as notebook computer power management and portable electronics.

 

Key electrical specifications include a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 900mA at 25°C. The On-Resistance (Rds On) is a maximum of 300mOhm at 1A and 10Vgs. Input capacitance (Ciss) is 135pF at 15Vds, and Gate Charge (Qg) is 3nC at 4.5Vgs.

 

This device operates within a temperature range of -55°C to 150°C (TJ). It is housed in an industry-standard SOT-23 surface mount package, specifically using the SUPERSOT-3 design for enhanced thermal and electrical performance. The NDS352AP is a Pb-Free device.

 

Applications include battery-powered circuits requiring fast high-side switching and low in-line power loss. Its small outline surface mount package is ideal for space-constrained designs.

NDS352AP Quick Information

Product Type: MOSFET
Canonical Name: P-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS352AP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Device

NDS352AP Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS352AP Features

  • P-Channel logic-level enhancement mode MOSFET.
  • 30V Drain-Source Voltage.
  • 900mA continuous drain current.
  • Low RDS(on) for efficiency.
  • SOT-23 surface mount package.

NDS352AP Applications

  • Notebook computer power management.
  • Portable electronic devices.
  • Battery-powered circuits.
  • Low voltage power switching.

NDS352AP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vdss) for the NDS352AP?

The Drain-Source Voltage (Vdss) for the NDS352AP is 30 V.

What is the continuous drain current of the NDS352AP?

The continuous drain current for the NDS352AP is 900mA at 25°C (Ta).

What is the maximum On-Resistance for the NDS352AP?

The maximum On-Resistance (Rds On) for the NDS352AP is 300mOhm at 1A drain current and 10Vgs.

What is the operating temperature range for the NDS352AP?

The operating temperature range for the NDS352AP is -55°C to 150°C (TJ).

What package type is the NDS352AP supplied in?

The NDS352AP is supplied in a SOT-23-3 package.

Is the NDS352AP RoHS compliant?

Yes, the NDS352AP is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NDS352AP?

The Moisture Sensitivity Level (MSL) for the NDS352AP is 1 Unlimited.

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