NDS351N The NDS351N is an N-Channel MOSFET from ON Semiconductor designed for small signal applications. It offers a 30V drain-to-source voltage and a maximum continuous drain current of 1.1A.
Mfr Part #:

NDS351N

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS351N is an N-Channel MOSFET from ON Semiconductor designed for small signal applications. It offers a 30V drain-to-source voltage and a maximum continuous drain current of 1.1A.
✓ Total Stock: 5,259 pcs
$ Price Range: $0.99

NDS351N Available from 5 distributors

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✓ Non-Authorised

NDS351N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS351N Description

Short technical summary and product information.

The ON Semiconductor NDS351N is a small signal field-effect transistor featuring an N-Channel MOSFET configuration. It is designed for surface mount applications and comes in a TO-236-3, SC-59, SOT-23-3 package, also known as SuperSOT-3.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current of 1.1A at ambient temperature. The on-resistance (Rds On) is a maximum of 160mOhm at 1.4A and 10Vgs. Gate charge (Qg) is 3.5nC maximum at 5Vgs, and input capacitance (Ciss) is 140pF maximum at 10Vds. The gate-to-source voltage (Vgs) has a maximum rating of ±20V, with a gate threshold voltage (Vgs(th)) of 2V maximum at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 500mW at ambient temperature. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

NDS351N Quick Information

Product Type: MOSFET
Canonical Name: NDS351N N-Channel MOSFET
Subcategory: Single

NDS351N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS351N Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS351N Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • 1.1A maximum continuous current.
  • 160mOhm maximum Rds On.
  • Surface mount SuperSOT-3 package.

NDS351N Applications

  • Suitable for low-voltage switching applications.
  • Used in small signal amplification circuits.
  • Ideal for load switching in portable devices.
  • Applicable in battery-powered electronic systems.

NDS351N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NDS351N?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current for the NDS351N?

The maximum continuous drain current is 1.1A at ambient temperature.

What is the maximum on-resistance of the NDS351N?

The maximum on-resistance (Rds On) is 160mOhm at 1.4A drain current and 10V gate-source voltage.

What is the operating temperature range for the NDS351N?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NDS351N available in?

The NDS351N is available in a TO-236-3, SC-59, SOT-23-3 package, also known as SuperSOT-3.

What is the RoHS status of the NDS351N?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NDS351N?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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