| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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465,639 pcs
|
465639 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,224 pcs
|
2224 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
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1,610 pcs
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1610 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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850 pcs
|
850 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
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99 pcs
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99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NDS351AN is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current of 1.4A (Ta). The MOSFET has a low on-resistance of 160mOhm at 1.4A and 10V gate-source voltage, with a gate threshold voltage of 3V at 250µA.
This device operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for surface mounting, provided in a TO-236-3, SC-59, SOT-23-3 package. Key electrical characteristics include an input capacitance of 145pF at 15V and a gate charge of 1.8nC at 4.5V. The maximum gate-source voltage is ±20V, and it has a power dissipation of 500mW (Ta).
The NDS351AN is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its compact SOT-23-3 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the NDS351AN MOSFET is 30V.
The continuous drain current for the NDS351AN is 1.4A (Ta).
The Rds On is a maximum of 160mOhm at 1.4A drain current and 10V gate-source voltage.
The operating temperature range for the NDS351AN is -55°C to 150°C (TJ).
The NDS351AN MOSFET is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The NDS351AN MOSFET is designed for surface mounting.