NDS336P The NDS336P is a P-Channel MOSFET from On Semiconductor with a 20V drain-source voltage and 1.2A continuous drain current. It is housed in a compact SOT-23-3 surface mount package.
Mfr Part #:

NDS336P

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS336P is a P-Channel MOSFET from On Semiconductor with a 20V drain-source voltage and 1.2A continuous drain current. It is housed in a compact SOT-23-3 surface mount package.
✓ Total Stock: 522,315 pcs
$ Price Range: $0.99

NDS336P Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NDS336P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

NDS336P Description

Short technical summary and product information.

The NDS336P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It features a high-density DMOS technology designed to minimize on-state resistance, making it suitable for low-voltage applications like notebook computer power management and portable electronics.

 

Key electrical characteristics include a drain-source voltage of 20V and a continuous drain current of 1.2A. The device offers low on-resistance values, such as 0.27 Ω at VGS = -2.7V and 0.2 Ω at VGS = -4.5V. It also boasts very low gate drive requirements, allowing direct operation in 3V circuits, with a gate threshold voltage typically below 1.0V.

 

The MOSFET is packaged in an industry-standard SOT-23-3 surface mount package, utilizing a copper lead frame for enhanced thermal and electrical performance. Its compact size and efficient operation make it ideal for battery-powered circuits requiring fast high-side switching and low power loss.

NDS336P Quick Information

Product Type: MOSFET
Series: PowerTrench®
Canonical Name: P-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NDS336P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS336P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS336P Features

  • P-Channel logic level enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 1.2A continuous drain current capability.
  • Low on-resistance (RDS(ON)).
  • Compact SOT-23-3 surface mount package.

NDS336P Applications

  • Notebook computer power management.
  • Portable electronic device power.
  • Battery-powered circuit applications.
  • Low voltage switching applications.

NDS336P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDS336P?

The drain-source voltage (Vdss) for the NDS336P is 20V.

What is the continuous drain current of the NDS336P?

The continuous drain current (Id) for the NDS336P is 1.2A.

What is the package type for the NDS336P?

The NDS336P is available in a SOT-23-3 package.

What is the operating temperature range for the NDS336P?

The operating and storage temperature range for the NDS336P is -55°C to 150°C.

What is the typical on-resistance of the NDS336P at VGS = -2.7V?

The typical static drain-source on-resistance (RDS(ON)) at VGS = -2.7V and ID = -1.2A is 0.27 Ω.

What is the typical total gate charge for the NDS336P?

The typical total gate charge (Qg) for the NDS336P is 5.7 nC.

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