NDS335N The NDS335N is an N-Channel MOSFET from On Semiconductor, designed for low voltage applications. It features a 20V drain-source voltage and a 1.7A continuous current capability.
Mfr Part #:

NDS335N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS335N is an N-Channel MOSFET from On Semiconductor, designed for low voltage applications. It features a 20V drain-source voltage and a 1.7A continuous current capability.
✓ Total Stock: 3,773 pcs
$ Price Range: $0.99

NDS335N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,863 pcs
2863 pcs On Request 1 On Request On Request 04+ On Request On Request
Non-Authorised Inventory information
910 pcs
910 pcs On Request 1 On Request On Request On Request On Request 2026-05-08 07:15:33

NDS335N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS335N Description

Short technical summary and product information.

The NDS335N is an N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It is designed for low voltage applications in portable devices such as notebook computers and mobile phones.

 

Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 1.7A at 25°C ambient temperature. The static drain-source on-resistance (Rds On) is a maximum of 110mOhm at a gate-source voltage of 4.5V and a drain current of 1.7A. The gate threshold voltage is a maximum of 1V at 250µA.

 

This MOSFET utilizes a high-density DMOS technology for minimized on-state resistance and low power loss. It is housed in a standard SOT-23-3 surface mount package, offering superior thermal and electrical capabilities for its size.

 

Operating temperature ranges from -55°C to 150°C. The input capacitance is 240pF at 10V, and the total gate charge is a maximum of 9nC at 4.5V.

NDS335N Quick Information

Product Type: MOSFET
Canonical Name: NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: Transistors - FETs, MOSFETs - Single

NDS335N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS335N Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS335N Features

  • N-Channel logic level enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 1.7A continuous drain current.
  • Low Rds On: 110mOhm max @ 4.5V.
  • SOT-23-3 surface mount package.

NDS335N Applications

  • Suitable for low voltage applications.
  • Ideal for battery powered circuits.
  • Used in portable electronic devices.
  • Enables fast switching and low power loss.

NDS335N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NDS335N?

The maximum drain-source voltage for the NDS335N is 20V.

What is the continuous drain current of the NDS335N?

The NDS335N has a continuous drain current of 1.7A at 25°C ambient temperature.

What is the maximum on-resistance (Rds On) for the NDS335N?

The maximum Rds On for the NDS335N is 110mOhm when the gate-source voltage is 4.5V and the drain current is 1.7A.

What is the operating temperature range for the NDS335N?

The NDS335N operates between -55°C and 150°C.

What package type is the NDS335N available in?

The NDS335N is available in a SOT-23-3 surface mount package.

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