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NDS332P The NDS332P is a P-Channel MOSFET from ON Semiconductor with a 20V drain-source voltage and 1A current rating. It is supplied in a surface-mount SOT-23-3 package.
Mfr Part #:

NDS332P

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS332P is a P-Channel MOSFET from ON Semiconductor with a 20V drain-source voltage and 1A current rating. It is supplied in a surface-mount SOT-23-3 package.
✓ Total Stock: 35,476 pcs
$ Price Range: $0.99

NDS332P Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NDS332P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NDS332P Description

Short technical summary and product information.

The NDS332P is a P-Channel MOSFET manufactured by ON Semiconductor. This component features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 1A. The device has a maximum power dissipation of 500mW.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 300mOhm at 1.1A and 4.5V, an input capacitance (Ciss) of 195pF at 10V, and a gate charge (Qg) of 5nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. The gate-source voltage (Vgs) has a maximum rating of ±8V, with drive voltages specified between 2.7V and 4.5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a TO-236-3, SC-59, SOT-23-3 configuration, designed for surface mounting. The technology employed is MOSFET (Metal Oxide).

 

The NDS332P is suitable for various switching and amplification applications where a P-Channel MOSFET is required. Its compact SOT-23-3 package makes it ideal for space-constrained designs.

NDS332P Quick Information

Product Type: MOSFET
Canonical Name: NDS332P P-Channel MOSFET
Subcategory: Single

NDS332P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS332P Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS332P Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 1A continuous drain current capability.
  • Surface mount SOT-23-3 package.
  • Operates from -55°C to 150°C.
  • Low input capacitance and gate charge.

NDS332P Applications

  • Suitable for general switching applications.
  • Ideal for power management circuits.
  • Used in battery-powered devices.
  • Applicable in low-voltage systems.

NDS332P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NDS332P MOSFET?

The drain-source voltage (Vdss) of the NDS332P is 20V.

What is the continuous drain current for the NDS332P?

The NDS332P has a continuous drain current rating of 1A.

What is the maximum power dissipation of the NDS332P?

The maximum power dissipation for the NDS332P is 500mW.

What is the on-resistance of the NDS332P at specified conditions?

The Rds On is a maximum of 300mOhm at 1.1A and 4.5V.

What is the operating temperature range for the NDS332P?

The NDS332P operates between -55°C and 150°C.

What package type is the NDS332P MOSFET supplied in?

The NDS332P is supplied in a TO-236-3, SC-59, SOT-23-3 package.

How is the NDS332P MOSFET mounted?

The NDS332P is a surface mount device.

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