| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
190,020 pcs
|
190020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39,447 pcs
|
39447 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,007 pcs
|
5007 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
2,286 pcs
|
2286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
868 pcs
|
868 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
528 pcs
|
528 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
144 pcs
|
144 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDS331N is an N-Channel logic-level enhancement mode power MOSFET manufactured by On Semiconductor. It utilizes a high cell density DMOS technology tailored to minimize on-state resistance, making it suitable for low-voltage applications.
Key electrical specifications include a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.3A at 25°C ambient temperature. The Rds On is as low as 160mOhm at 1.5A and 4.5V Vgs. Gate charge (Qg) is 5nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 162pF maximum at 10V Vds. The gate-source voltage (Vgs) range is ±8V, with a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an industry-standard SOT-23-3 surface mount package, designed for superior thermal and electrical capabilities. The device has a maximum power dissipation of 500mW at 25°C ambient temperature.
The NDS331N is particularly suited for battery-powered circuits such as notebook computers, portable phones, and PCMCIA cards where fast switching and low in-line power loss are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NDS331N is 20V.
The continuous drain current for the NDS331N is 1.3A at 25°C ambient temperature.
The on-resistance (Rds On) is a maximum of 160mOhm at 1.5A drain current and 4.5V gate-source voltage.
The operating temperature range for the NDS331N is -55°C to 150°C.
The NDS331N is available in a SOT-23-3 surface mount package.
Yes, the NDS331N is RoHS3 compliant.
The standard package quantity for the NDS331N is 3000 units.