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NDS0610-G The ON Semiconductor NDS0610-G is a P-Channel Enhancement Mode MOSFET Transistor. It features a Drain-to-Source Voltage of 60V and a low Rds(on) of 10 Ohms.
Mfr Part #:

NDS0610-G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDS0610-G is a P-Channel Enhancement Mode MOSFET Transistor. It features a Drain-to-Source Voltage of 60V and a low Rds(on) of 10 Ohms.
✓ Total Stock: 969,423 pcs
$ Price Range: $0.99

NDS0610-G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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969,423 pcs
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NDS0610-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NDS0610-G Description

Short technical summary and product information.

The ON Semiconductor NDS0610-G is a P-Channel Enhancement Mode Field Effect Transistor designed for low voltage applications requiring a low current high side switch. It utilizes onsemi's proprietary high cell density DMOS technology to minimize on-state resistance and provide reliable performance.

 

Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 60V and a maximum continuous drain current of 120mA. The on-state resistance (Rds(on)) is 10 Ohms at 500mA drain current and 10V gate-source voltage, and 50 Ohms at 4.5V gate-source voltage. The device has a gate threshold voltage (Vgs(th)) of 3.5V maximum at 1mA.

 

This MOSFET is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C. The device is manufactured using MOSFET (Metal Oxide) technology and is suitable for applications requiring up to 120 mA DC and can deliver current up to 1 A.

NDS0610-G Quick Information

Product Type: MOSFET Transistor
Series: NDS0610-G
Canonical Name: NDS0610 P-Channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS0610-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NDS0610-G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS0610-G Features

  • P-Channel Enhancement Mode MOSFET Transistor.
  • 60V Drain-to-Source Voltage.
  • Low 10 Ohm Rds(on) at 10V.
  • Compact SOT-23-3 surface mount package.
  • Wide -55°C to 150°C operating temperature.

NDS0610-G Applications

  • Suitable for low voltage high side switching.
  • Ideal for battery-powered circuit applications.
  • Used in load switching for portable devices.
  • Applicable in low-current switching circuits.
  • Suitable for high-speed switching in compact designs.

NDS0610-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage (Vdss) for the NDS0610-G?

The Drain-to-Source Voltage (Vdss) is 60 V.

What is the maximum Gate-to-Source Voltage (Vgs) for the NDS0610-G?

The maximum Gate-to-Source Voltage (Vgs) is ±20V.

What is the Rds On (Max) @ Id, Vgs for the NDS0610-G?

The Rds On (Max) is 10 Ohm at 500mA, 10V.

What is the operating temperature range for the NDS0610-G?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NDS0610-G available in?

The NDS0610-G is available in a TO-236-3, SC-59, SOT-23-3 package.

Is the NDS0610-G RoHS compliant?

The NDS0610-G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NDS0610-G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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