| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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981,423 pcs
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981423 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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63,478 pcs
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63478 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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46,020 pcs
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46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,390 pcs
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4390 pcs | On Request | 1 | On Request | On Request | 0935+ | On Request | On Request | |
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3,466 pcs
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3466 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,345 pcs
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2345 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,208 pcs
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2208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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925 pcs
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925 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-05-08 07:15:33 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDS0610 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It utilizes a high cell density DMOS technology to minimize on-state resistance and provide reliable performance.
This MOSFET is rated for a drain-to-source voltage of 60V and a continuous drain current of 120mA at 25°C ambient temperature. It features a maximum power dissipation of 360mW (Ta) and an on-resistance of 10 Ohms at 500mA drain current and 10V gate-source voltage.
The NDS0610 is particularly suited for low-voltage applications requiring a low current high-side switch. It operates within a temperature range of -55°C to 150°C (TJ).
The device is supplied in a SOT-23-3 (TO-236-3, SC-59) surface-mount package, making it suitable for compact electronic designs. It is available on tape and reel for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the NDS0610 is 60V.
The continuous drain current for the NDS0610 is 120mA at 25°C ambient temperature.
The on-resistance (Rds(on)) of the NDS0610 is a maximum of 10 Ohms when the drain current is 500mA and the gate-source voltage is 10V.
The NDS0610 MOSFET is supplied in a SOT-23-3 package.
The operating temperature range for the NDS0610 is -55°C to 150°C (TJ).