NDS0610 The NDS0610 is a P-Channel MOSFET from On Semiconductor designed for low-voltage applications. It offers a 60V drain-to-source voltage and 120mA continuous current in a compact SOT-23 package.
Mfr Part #:

NDS0610

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDS0610 is a P-Channel MOSFET from On Semiconductor designed for low-voltage applications. It offers a 60V drain-to-source voltage and 120mA continuous current in a compact SOT-23 package.
✓ Total Stock: 1,104,255 pcs
$ Price Range: $0.99

NDS0610 Available from 8 distributors

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✓ Non-Authorised

NDS0610 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDS0610 Description

Short technical summary and product information.

The NDS0610 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It utilizes a high cell density DMOS technology to minimize on-state resistance and provide reliable performance.

 

This MOSFET is rated for a drain-to-source voltage of 60V and a continuous drain current of 120mA at 25°C ambient temperature. It features a maximum power dissipation of 360mW (Ta) and an on-resistance of 10 Ohms at 500mA drain current and 10V gate-source voltage.

 

The NDS0610 is particularly suited for low-voltage applications requiring a low current high-side switch. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is supplied in a SOT-23-3 (TO-236-3, SC-59) surface-mount package, making it suitable for compact electronic designs. It is available on tape and reel for automated assembly.

NDS0610 Quick Information

Product Type: MOSFET Transistor
Canonical Name: NDS0610 P-Channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDS0610 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDS0610 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDS0610 Features

  • P-Channel MOSFET for low-voltage applications.
  • 60V drain-to-source voltage rating.
  • 120mA continuous drain current.
  • Low on-resistance: 10 Ohm @ 500mA, 10V.
  • Compact SOT-23 surface-mount package.

NDS0610 Applications

  • Suitable for low-voltage high-side switching.
  • Ideal for battery-powered portable devices.
  • Used in load switching for consumer electronics.
  • Applicable in motor control and automation circuits.
  • Suitable for compact, surface-mount circuit designs.

NDS0610 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NDS0610 MOSFET?

The drain-to-source voltage (Vdss) of the NDS0610 is 60V.

What is the continuous drain current for the NDS0610?

The continuous drain current for the NDS0610 is 120mA at 25°C ambient temperature.

What is the on-resistance of the NDS0610 MOSFET?

The on-resistance (Rds(on)) of the NDS0610 is a maximum of 10 Ohms when the drain current is 500mA and the gate-source voltage is 10V.

What package type is the NDS0610 MOSFET supplied in?

The NDS0610 MOSFET is supplied in a SOT-23-3 package.

What is the operating temperature range for the NDS0610?

The operating temperature range for the NDS0610 is -55°C to 150°C (TJ).

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