| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,020 pcs
|
43020 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
13,684 pcs
|
13684 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,858 pcs
|
1858 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,468 pcs
|
1468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
990 pcs
|
990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
175 pcs
|
175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | G5DB/P/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDS0605 is a P-Channel enhancement mode field-effect transistor manufactured by On Semiconductor using a high cell density DMOS technology. This technology is optimized for low on-state resistance, reliable performance, and fast switching.
This MOSFET is suitable for applications requiring up to 180 mA DC and can handle currents up to 1 A. It is particularly well-suited for low voltage applications that need a low current, high-side switch. Key electrical specifications include a drain-source voltage of 60V, a maximum continuous drain current of 180mA, and a low on-state resistance of 5 Ohms at 500mA and 10V gate-source voltage.
The NDS0605 features a P-Channel configuration and operates with a gate-source voltage range of ±20V. Its input capacitance is 79 pF at 25V, and gate charge is 2.5 nC at 10V. The device operates within a temperature range of -55°C to 150°C.
Packaged in a TO-236-3, SC-59, SOT-23-3 surface mount package, the NDS0605 is supplied on tape and reel with a standard quantity of 3000 units. It is Pb-Free and Halide Free, complying with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the NDS0605 is 60V.
The maximum continuous drain current (Id) for the NDS0605 is 180mA at 25°C.
The on-state resistance (Rds On) is a maximum of 5 Ohms when the gate-source voltage is 10V and the drain current is 500mA.
The operating and storage junction temperature range for the NDS0605 is -55°C to 150°C.
The NDS0605 is available in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the NDS0605 is RoHS3 compliant.