| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 0047 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NDP4050 from ON Semiconductor is an N-Channel enhancement mode power field effect transistor. It is manufactured using a high cell density DMOS technology, optimized for low on-state resistance and superior switching performance.
Key electrical specifications include a drain-source voltage (Vdss) of 50V, a continuous drain current (Id) of 15A at the case temperature, and a maximum static drain-source on-resistance (Rds(on)) of 100mOhm at 7.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. Input capacitance (Ciss) is rated at a maximum of 450pF at 25V, and gate charge (Qg) is a maximum of 17nC at 10V.
This MOSFET is suitable for low voltage applications such as automotive, DC/DC converters, and PWM motor controls. It operates within a temperature range of -65 to 175°C.
The NDP4050 is available in a TO-220-3 package, designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 50 V.
The device can handle a continuous drain current of 15A.
The static drain-source on-resistance is 0.1Ω.
The gate threshold voltage is 4V.
It is packaged in a TO-220-3 case.
The operating and storage temperature range is -65°C to 175°C.
It is RoHS3 compliant, although this status is unverified.