DistyParts Icon
NDH8502P The NDH8502P is a P-Channel MOSFET Array from On Semiconductor. It features a 30V drain-source voltage and a 2.2A current rating.
Mfr Part #:

NDH8502P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDH8502P is a P-Channel MOSFET Array from On Semiconductor. It features a 30V drain-source voltage and a 2.2A current rating.
✓ Total Stock: 2,780 pcs
$ Price Range: $0.99

NDH8502P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
2,780 pcs
On Request
2780 pcs On Request 1 On Request On Request 421 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NDH8502P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
View Similar Products (0)

NDH8502P Description

Short technical summary and product information.

The NDH8502P is a P-Channel MOSFET Array manufactured by On Semiconductor. This component is designed for surface mounting and comes in a SuperSOT-8 package, specifically an 8-TSOP with a width of 0.130 inches (3.30mm).

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 2.2A at ambient temperature. The on-resistance (Rds On) is a maximum of 110mOhm at 2.2A and 10V gate-source voltage. Input capacitance (Ciss) is rated at 340pF at 15V, and gate charge (Qg) is a maximum of 14.5nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.

 

This MOSFET array operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 800mW at ambient temperature. It is configured as two P-Channel MOSFETs.

 

The NDH8502P is RoHS3 compliant, has a Moisture Sensitivity Level (MSL) of 1, and is REACH unaffected. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.

NDH8502P Quick Information

Product Type: MOSFET Array
Canonical Name: NDH8502P P-Channel MOSFET Array
Subcategory: FET, MOSFET Arrays

NDH8502P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDH8502P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDH8502P Features

  • Dual P-Channel MOSFET array.
  • 30V drain-source voltage rating.
  • 2.2A continuous drain current.
  • 110mOhm maximum Rds On.
  • Surface mountable SuperSOT-8 package.

NDH8502P Applications

  • Suitable for power switching applications.
  • Ideal for battery management circuits.
  • Used in load switch applications.
  • General purpose MOSFET applications.

NDH8502P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDH8502P?

The drain-source voltage (Vdss) for the NDH8502P is 30V.

What is the continuous drain current of the NDH8502P?

The continuous drain current is 2.2A.

What is the Rds On for the NDH8502P?

The Rds On is a maximum of 110mOhm at 2.2A and 10V.

What is the operating temperature range for this MOSFET array?

The operating temperature range is -55°C to 150°C.

What package type is the NDH8502P in?

The NDH8502P is in an 8-TSOP (0.130", 3.30mm Width) package, also known as SuperSOT-8.

How is the NDH8502P mounted?

The NDH8502P is designed for surface mounting.

Home
Account

Categories