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NDH8303N The NDH8303N is an N-Channel enhancement mode power field effect transistor from On Semiconductor. It features a 20V drain-source voltage and 5.8A continuous drain current.
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NDH8303N

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDH8303N is an N-Channel enhancement mode power field effect transistor from On Semiconductor. It features a 20V drain-source voltage and 5.8A continuous drain current.
✓ Total Stock: 1,889 pcs

NDH8303N Available from 1 distributor

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Husky International Electronic ✓
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1,889 pcs
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1889 pcs On Request 1 On Request On Request N/A On Request On Request
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NDH8303N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NDH8303N Description

Short technical summary and product information.

The NDH8303N is an N-Channel enhancement mode power field effect transistor manufactured by On Semiconductor. It utilizes a proprietary, high cell density DMOS technology, optimized for low on-state resistance and superior switching performance.

 

Key electrical characteristics include a drain-source voltage of 20V and a continuous drain current of 5.8A. This device is designed for applications requiring efficient power switching and control.

 

Produced using Fairchild's proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for applications requiring low on-state resistance and excellent thermal performance.

 

This transistor is suitable for various electronic applications where reliable switching and power management are critical. Its construction is based on silicon Metal-oxide Semiconductor FET technology.

NDH8303N Quick Information

Product Type: Field-Effect Transistor
Canonical Name: NDH8303N N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel

NDH8303N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDH8303N Features

  • N-Channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 5.8A continuous drain current.
  • High cell density DMOS technology.
  • Optimized for low on-state resistance.

NDH8303N Applications

  • Used in low-voltage power switching circuits.
  • Ideal for DC-DC converter applications.
  • Suitable for load switch designs.
  • Applicable in battery management systems.
  • Use in portable electronics power management.

NDH8303N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDH8303N?

The drain-source voltage for the NDH8303N is 20V.

What is the continuous drain current of the NDH8303N?

The continuous drain current for the NDH8303N is 5.8A.

What type of transistor is the NDH8303N?

The NDH8303N is an N-Channel enhancement mode field effect transistor.

What is the RoHS status of the NDH8303N?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NDH8303N?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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