NDF04N60ZH The ON Semiconductor NDF04N60ZH is an N-Channel Power MOSFET designed for 600V applications. It offers a continuous drain current of 4.8A and a power dissipation of 30W.
Mfr Part #:

NDF04N60ZH

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDF04N60ZH is an N-Channel Power MOSFET designed for 600V applications. It offers a continuous drain current of 4.8A and a power dissipation of 30W.
✓ Total Stock: 2,049 pcs
$ Price Range: $0.99

NDF04N60ZH Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,049 pcs
2049 pcs On Request 1 On Request On Request 10+ On Request On Request

NDF04N60ZH Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDF04N60ZH Description

Short technical summary and product information.

The NDF04N60ZH from ON Semiconductor is an N-Channel Power MOSFET with a drain-to-source voltage rating of 600V. This device features a low ON resistance and low gate charge, making it suitable for various power switching applications.

 

Key electrical characteristics include a continuous drain current of 4.8A at 25°C case temperature and a maximum power dissipation of 30W. The MOSFET has a gate-to-source voltage range of ±30V and a gate threshold voltage of up to 4.5V. Its static drain-to-source ON-resistance is a maximum of 2 Ohms at 2A drain current and 10V gate-to-source voltage.

 

The NDF04N60ZH is housed in a TO-220-3 Full Pack package, designed for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

This MOSFET is 100% avalanche tested and features an ESD-protected gate, enhancing its reliability in demanding environments. Its thermal resistance from junction to case is 4.2°C/W.

NDF04N60ZH Quick Information

Product Type: MOSFET
Canonical Name: NDF04N60ZH N-Channel Power MOSFET
Subcategory: N-Channel

NDF04N60ZH Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NDF04N60ZH Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDF04N60ZH Features

  • 600V drain-to-source voltage rating.
  • 4.8A continuous drain current capability.
  • 30W maximum power dissipation.
  • TO-220-3 Full Pack package.
  • Pb-Free and Halogen Free compliant.

NDF04N60ZH Applications

  • Suitable for power switching applications.
  • Designed for through-hole mounting.
  • Features ESD-protected gate.
  • 100% avalanche tested.

NDF04N60ZH FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NDF04N60ZH?

The drain-to-source voltage (Vdss) for the NDF04N60ZH is 600 V.

What is the continuous drain current of the NDF04N60ZH?

The continuous drain current is 4.8 A at 25°C case temperature.

What is the maximum power dissipation for the NDF04N60ZH?

The maximum power dissipation is 30 W at 25°C case temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NDF04N60ZH supplied in?

The NDF04N60ZH is supplied in a TO-220-3 Full Pack package.

Is the NDF04N60ZH RoHS compliant?

Yes, the NDF04N60ZH is RoHS3 Compliant.

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