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NDDL01N60Z-1G The NDDL01N60Z-1G is an N-Channel Power MOSFET from ON Semiconductor with a 600V drain-to-source voltage and 800mA continuous drain current. It is available in an IPAK package.
Mfr Part #:

NDDL01N60Z-1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDDL01N60Z-1G is an N-Channel Power MOSFET from ON Semiconductor with a 600V drain-to-source voltage and 800mA continuous drain current. It is available in an IPAK package.
✓ Total Stock: 1,350 pcs
$ Price Range: $0.99

NDDL01N60Z-1G Available from 1 distributor

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✓ Non-Authorised
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1,350 pcs
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NDDL01N60Z-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NDDL01N60Z-1G Description

Short technical summary and product information.

The NDDL01N60Z-1G is an N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications. It features a high drain-to-source breakdown voltage of 600V and a continuous drain current rating of 800mA at 25°C ambient temperature.

 

Key electrical characteristics include a maximum gate threshold voltage of 4.5V and a maximum Rds On of 15 Ohms at 400mA and 10V gate drive voltage. The device also has a gate charge of 4.9 nC and an input capacitance of 92 pF.

 

This MOSFET is housed in an IPAK package (TO-251-3 Short Leads) suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 26W at the case temperature.

 

The NDDL01N60Z-1G is RoHS3 compliant, Pb-Free, and Halogen Free, making it suitable for various electronic designs.

NDDL01N60Z-1G Quick Information

Product Type: MOSFET
Canonical Name: NDDL01N60Z-1G N-Channel Power MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

NDDL01N60Z-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDDL01N60Z-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDDL01N60Z-1G Features

  • 600V drain-to-source breakdown voltage.
  • 800mA continuous drain current.
  • 15 Ohm maximum Rds On.
  • N-Channel MOSFET technology.
  • IPAK package for through-hole mounting.

NDDL01N60Z-1G Applications

  • Suitable for power switching applications.
  • Used in general purpose power supplies.
  • Ideal for motor control circuits.
  • Applicable in lighting control systems.

NDDL01N60Z-1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the NDDL01N60Z-1G?

The drain-to-source breakdown voltage is 600V.

What is the continuous drain current for the NDDL01N60Z-1G?

The continuous drain current is 800mA at 25°C ambient temperature.

What is the maximum Rds On for the NDDL01N60Z-1G?

The maximum Rds On is 15 Ohms at 400mA drain current and 10V gate-to-source voltage.

What is the operating temperature range of the NDDL01N60Z-1G?

The operating temperature range is -55°C to 150°C.

What package type is the NDDL01N60Z-1G MOSFET in?

The NDDL01N60Z-1G is in an IPAK package, specifically TO-251-3 Short Leads.

Is the NDDL01N60Z-1G RoHS compliant?

Yes, the NDDL01N60Z-1G is RoHS3 compliant.

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