NDD60N360U1T4G The On Semiconductor NDD60N360U1T4G is an N-Channel Power MOSFET designed for high-voltage applications. It offers a 600V drain-to-source voltage and a continuous drain current of 11A.
Mfr Part #:

NDD60N360U1T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NDD60N360U1T4G is an N-Channel Power MOSFET designed for high-voltage applications. It offers a 600V drain-to-source voltage and a continuous drain current of 11A.
✓ Total Stock: 3,147 pcs
$ Price Range: $0.99

NDD60N360U1T4G Available from 1 distributor

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3,147 pcs
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NDD60N360U1T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDD60N360U1T4G Description

Short technical summary and product information.

The NDD60N360U1T4G from On Semiconductor is an N-Channel Power MOSFET with a maximum drain-to-source voltage (VDSS) of 600V. It can handle a continuous drain current of 11A at 25°C case temperature and dissipate up to 114W of power.

 

This MOSFET features a low static drain-to-source on-resistance (Rds(on)) of 360mOhm maximum at 5.5A and 10V gate drive voltage. The operating junction temperature range is from -55°C to +150°C. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and input capacitance (Ciss) of 790pF at 50V. The device is 100% avalanche tested and is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Designed for power management applications, this MOSFET is suitable for various switching and power conversion circuits where high voltage and moderate current handling are required. Its surface mount DPAK package facilitates integration into compact PCB designs.

NDD60N360U1T4G Quick Information

Product Type: MOSFET
Canonical Name: NDD60N360U1T4G N-Channel Power MOSFET
Subcategory: Power MOSFET

NDD60N360U1T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDD60N360U1T4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDD60N360U1T4G Features

  • 600V drain-to-source voltage rating.
  • 11A continuous drain current capability.
  • 360mOhm maximum Rds(on) at 10V.
  • Surface mount DPAK package.
  • Pb-Free and Halogen Free compliant.

NDD60N360U1T4G Applications

  • Suitable for high-voltage power switching applications.
  • Used in industrial motor control circuits.
  • Ideal for power supply and inverter designs.
  • Applicable in energy-efficient power conversion systems.

NDD60N360U1T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NDD60N360U1T4G?

The maximum drain-to-source voltage (VDSS) is 600 V.

What is the continuous drain current of the NDD60N360U1T4G?

The continuous drain current is 11A at 25°C case temperature.

What is the Rds(on) for the NDD60N360U1T4G?

The maximum Rds(on) is 360mOhm at 5.5A and 10V gate drive.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to +150°C.

What package type is the NDD60N360U1T4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NDD60N360U1T4G RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NDD60N360U1T4G?

The Moisture Sensitivity Level is 1 Unlimited.

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