NDD05N50ZT4G The On Semiconductor NDD05N50ZT4G is an N-Channel Power MOSFET designed for 500V applications. It offers a continuous drain current of 4.7A and a low on-resistance.
Mfr Part #:

NDD05N50ZT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NDD05N50ZT4G is an N-Channel Power MOSFET designed for 500V applications. It offers a continuous drain current of 4.7A and a low on-resistance.
✓ Total Stock: 120,000 pcs
$ Price Range: $0.99

NDD05N50ZT4G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,000 pcs
120000 pcs On Request 1 On Request On Request On Request On Request On Request

NDD05N50ZT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDD05N50ZT4G Description

Short technical summary and product information.

The NDD05N50ZT4G is an N-Channel Power MOSFET from On Semiconductor, featuring a Drain-to-Source Voltage (Vdss) of 500V. This device is designed for efficient power switching applications, offering a continuous drain current of up to 4.7A at 25°C case temperature.

 

Key electrical characteristics include a maximum On-Resistance (Rds On) of 1.5 Ohm at 2.2A and 10V gate drive, and a Gate Threshold Voltage (Vgs(th)) of 4.5V maximum. The MOSFET also boasts low gate charge and is ESD diode-protected.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the NDD05N50ZT4G operates within a junction temperature range of -55°C to 150°C. It is suitable for various power management circuits where high voltage and moderate current handling are required.

 

This component is Pb-Free and Halogen Free, aligning with RoHS compliance standards. Its robust design and reliable performance make it a suitable choice for demanding applications.

NDD05N50ZT4G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel

NDD05N50ZT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDD05N50ZT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDD05N50ZT4G Features

  • 500V Drain-to-Source Voltage (Vdss)
  • 4.7A Continuous Drain Current
  • 1.5 Ohm Max On-Resistance
  • N-Channel MOSFET Technology
  • Surface Mount DPAK Package

NDD05N50ZT4G Applications

  • High-voltage power switching circuits
  • Power supply regulation
  • Motor control applications
  • High-voltage switching in industrial equipment

NDD05N50ZT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NDD05N50ZT4G?

The drain-to-source voltage is 500 V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 4.7 A.

What package type does the NDD05N50ZT4G use?

It uses a DPAK (TO-252-3) surface mount package.

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage is ±30 V.

What is the maximum junction temperature for this device?

The operating junction and storage temperature range is -55°C to 150°C.

Is the NDD05N50ZT4G RoHS compliant?

Yes, it is RoHS3 compliant.

Home
Account

Categories