| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDD04N60ZT4G from On Semiconductor is an N-Channel Power MOSFET. It features a high drain-to-source voltage rating of 600V and a continuous drain current capability of 4.1A at 25°C.
This MOSFET is designed for surface mounting in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. Key electrical characteristics include a maximum on-resistance of 2 Ohm at 2A/10V and a gate threshold voltage of 4.5V at 50µA. The device also offers a low gate charge and is ESD diode-protected.
With a maximum power dissipation of 83W and an operating temperature range of -55°C to 150°C, the NDD04N60ZT4G is suitable for various power switching applications. Its construction utilizes MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600 V.
The continuous drain current (Id) at 25°C is 4.1A.
The package type is TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the RoHS status is RoHS3 Compliant.