NDD03N80ZT4G The On Semiconductor NDD03N80ZT4G is an N-Channel Power MOSFET designed for high voltage applications. It offers an 800V drain-to-source voltage and a continuous drain current of 2.9A.
Mfr Part #:

NDD03N80ZT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NDD03N80ZT4G is an N-Channel Power MOSFET designed for high voltage applications. It offers an 800V drain-to-source voltage and a continuous drain current of 2.9A.
✓ Total Stock: 100 pcs
$ Price Range: $0.99

NDD03N80ZT4G Available from 1 distributor

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✓ Non-Authorised
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100 pcs
100 pcs On Request 1 On Request On Request 12+ On Request On Request

NDD03N80ZT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDD03N80ZT4G Description

Short technical summary and product information.

The NDD03N80ZT4G from On Semiconductor is an N-Channel Power MOSFET with a maximum drain-to-source voltage (Vdss) of 800V. It is designed for applications requiring high voltage handling capabilities.

 

Key electrical characteristics include a maximum continuous drain current of 2.9A at 25°C case temperature, and a maximum pulsed drain current of 12A. The static drain-to-source on-resistance (Rds On) is a maximum of 4.5 Ohm at 1.2A and 10V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 50µA.

 

This MOSFET features a gate-to-source voltage range of ±30V and an input capacitance (Ciss) of 440pF at 25V. It also has an ESD protection diode on the gate and is 100% avalanche tested.

 

The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The operating junction and storage temperature range is -55°C to 150°C. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NDD03N80ZT4G Quick Information

Product Type: MOSFET
Series: NDD03N80ZT4G
Canonical Name: NDD03N80ZT4G N-Channel Power MOSFET
Subcategory: N-Channel

NDD03N80ZT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDD03N80ZT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDD03N80ZT4G Features

  • 800V drain-to-source voltage rating.
  • 2.9A maximum continuous drain current.
  • 4.5 Ohm maximum Rds On.
  • Surface mount DPAK-3 package.
  • Pb-Free and RoHS Compliant.

NDD03N80ZT4G Applications

  • High voltage power switching.
  • General purpose power applications.
  • Switch mode power supplies.
  • Power factor correction circuits.

NDD03N80ZT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NDD03N80ZT4G?

The maximum drain-to-source voltage (Vdss) is 800 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 2.9 A at 25°C case temperature.

What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 4.5 Ohm at 1.2A drain current and 10V gate-to-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NDD03N80ZT4G in?

It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Is the NDD03N80ZT4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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