| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
251 pcs
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251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDD03N80Z-1G is a power MOSFET manufactured by On Semiconductor. It features an N-Channel design with a drain-to-source voltage of 800V, making it suitable for high-voltage switching and power management applications. The device can handle a continuous drain current of 2.9A at 25°C and 1.9A at 100°C, with a pulsed drain current of 12A. It is packaged in an IPAK form factor, designed for surface mounting. The MOSFET also offers a maximum gate-to-source voltage of ±30V and a maximum power dissipation of 96W at 25°C. Its high ESD tolerance of 2300V and RMS isolation voltage of 4500V make it suitable for robust electrical environments. The device is rated for a maximum soldering temperature of 260°C, ensuring reliable assembly. This component is ideal for high-voltage power supplies, motor control, and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 800 V.
The maximum continuous drain current at 25°C is 2.9 A.
The maximum gate-to-source voltage is ±30 V.
The maximum power dissipation is 96 W at 25°C.
The maximum temperature for soldering leads is 260°C.