NDD02N60Z-1G The NDD02N60Z-1G is an N-Channel Power MOSFET from ON Semiconductor with a 600V drain-to-source voltage rating. It offers a continuous drain current of 2.2A and a low on-resistance.
Mfr Part #:

NDD02N60Z-1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDD02N60Z-1G is an N-Channel Power MOSFET from ON Semiconductor with a 600V drain-to-source voltage rating. It offers a continuous drain current of 2.2A and a low on-resistance.
✓ Total Stock: 1,450 pcs
$ Price Range: $0.99

NDD02N60Z-1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,050 pcs
1050 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
400 pcs
400 pcs On Request 1 On Request On Request 11+ On Request On Request

NDD02N60Z-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDD02N60Z-1G Description

Short technical summary and product information.

The NDD02N60Z-1G is an N-Channel Power MOSFET designed for various applications requiring high voltage and current handling capabilities. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2.2A at 25°C case temperature.

 

Key electrical characteristics include a low static drain-to-source on-resistance (Rds(on)) of 4.8 Ohm maximum at 1A and 10V gate-to-source voltage, and a gate threshold voltage (Vgs(th)) of 4.5V maximum at 50µA. The device also boasts a low gate charge (Qg) of 10.1 nC maximum at 10V, contributing to efficient switching performance. It includes ESD diode-protected gate for enhanced robustness.

 

This MOSFET is housed in an I-PAK (TO-251-3 Short Leads) package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 57W at 25°C case temperature. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

With its 100% avalanche tested rating and robust construction, the NDD02N60Z-1G is suitable for power switching applications where reliability and performance are critical.

NDD02N60Z-1G Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: NDD02N60Z-1G N-Channel Power MOSFET
Subcategory: N-Channel

NDD02N60Z-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NDD02N60Z-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDD02N60Z-1G Features

  • 600V drain-to-source voltage rating.
  • 2.2A continuous drain current.
  • 4.8 Ohm maximum on-resistance.
  • Low gate charge for efficient switching.
  • ESD diode-protected gate.

NDD02N60Z-1G Applications

  • Suitable for high-voltage power switching
  • Used in power supply circuits
  • Ideal for motor control applications
  • Applicable in high-voltage switching circuits

NDD02N60Z-1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) for the NDD02N60Z-1G?

The maximum drain-to-source voltage (Vdss) is 600 V.

What is the continuous drain current for the NDD02N60Z-1G?

The continuous drain current is 2.2 A at 25°C case temperature and 1.4 A at 100°C case temperature.

What is the maximum on-resistance (Rds On) for the NDD02N60Z-1G?

The maximum Rds On is 4.8 Ohm when the gate-to-source voltage is 10V and the drain current is 1A.

What is the operating temperature range for the NDD02N60Z-1G?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NDD02N60Z-1G supplied in?

The NDD02N60Z-1G is supplied in a TO-251-3 Short Leads, IPak, TO-251AA package.

Is the NDD02N60Z-1G RoHS compliant?

Yes, the NDD02N60Z-1G is RoHS3 Compliant.

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