| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDD01N60T4G is a power MOSFET manufactured by On Semiconductor. It features an N-Channel design with a maximum drain-to-source voltage of 600V, suitable for high-voltage switching applications. The device has a maximum input capacitance of 160 pF at 25V and a gate charge of 7.2 nC at 10V Vgs, making it suitable for fast switching circuits. Its maximum gate-source voltage is ±30V, and the gate threshold voltage at a drain current of 50µA is 3.7V. Packaged in a DPAK form factor, it is designed for surface mounting on printed circuit boards. This MOSFET is used in power supplies, motor control, and high-voltage switching applications where reliable high-voltage operation is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The maximum gate-source voltage is ±30V.
The maximum gate charge is 7.2 nC at Vgs = 10V.