NDC7001C The ON Semiconductor NDC7001C is a dual N-channel and P-channel enhancement mode MOSFET. It features a 60V drain-source voltage and is available in a SuperSOT™-6 package.
Mfr Part #:

NDC7001C

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDC7001C is a dual N-channel and P-channel enhancement mode MOSFET. It features a 60V drain-source voltage and is available in a SuperSOT™-6 package.
✓ Total Stock: 90,587 pcs
$ Price Range: $0.99

NDC7001C Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NDC7001C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NDC7001C Description

Short technical summary and product information.

The NDC7001C from ON Semiconductor is a dual field-effect transistor featuring both N-channel and P-channel enhancement mode MOSFETs. This device is constructed using a high cell density DMOS technology, designed for low on-state resistance, rugged performance, and fast switching. It is particularly suitable for low voltage, low current switching and power supply applications.

 

The N-channel FET (Q1) offers a continuous drain current of 510mA at 60V with a maximum Rds(On) of 2 Ohm at 10V Vgs. The P-channel FET (Q2) provides a continuous drain current of -340mA at -60V with a maximum Rds(On) of 5 Ohm at -10V Vgs. The device operates over a temperature range of -55°C to 150°C.

 

Packaged in a SuperSOT™-6 (SOT-23-6 Thin) surface mount package, the NDC7001C utilizes a copper lead frame for superior thermal and electrical capabilities. It is a Pb-Free device, meeting RoHS 3 compliance. The logic level gate feature makes it suitable for various low-voltage applications.

NDC7001C Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel and P-Channel Enhancement Mode Field Effect Transistor
Subcategory: N/P-Channel

NDC7001C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Device

NDC7001C Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDC7001C Features

  • Dual N-channel and P-channel MOSFETs.
  • 60V drain-source voltage rating.
  • 510mA and -340mA continuous drain current.
  • Low Rds(On) for efficient switching.
  • SuperSOT™-6 surface mount package.

NDC7001C Applications

  • Suitable for low voltage applications.
  • Ideal for low current switching.
  • Used in power supply circuits.
  • Designed for fast switching performance.

NDC7001C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the NDC7001C?

The operating and storage temperature range for the NDC7001C is -55°C to 150°C.

What package type is the NDC7001C available in?

The NDC7001C is available in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as SuperSOT™-6.

Is the NDC7001C RoHS compliant?

Yes, the NDC7001C is RoHS 3 compliant.

What is the maximum continuous drain current for the N-channel and P-channel in the NDC7001C?

The N-channel has a maximum continuous drain current of 510mA, and the P-channel has a maximum continuous drain current of -340mA.

What is the maximum Rds(On) for the NDC7001C N-channel FET?

The maximum Rds(On) for the N-channel FET is 2 Ohm at an Id of 510mA and Vgs of 10V.

What is the gate threshold voltage for the NDC7001C N-channel FET?

The gate threshold voltage for the N-channel FET is typically 2.1V and has a maximum of 2.5V at an Id of 250µA.

Home
Account

Categories