NDC652P The ON Semiconductor NDC652P is a P-Channel MOSFET designed for low voltage applications. It offers a 30V drain-source voltage and 2.4A continuous drain current.
Mfr Part #:

NDC652P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDC652P is a P-Channel MOSFET designed for low voltage applications. It offers a 30V drain-source voltage and 2.4A continuous drain current.
✓ Total Stock: 8,653 pcs
$ Price Range: $0.99

NDC652P Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,146 pcs
3146 pcs On Request 1 On Request On Request 06+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,329 pcs
1329 pcs On Request 1 On Request On Request 0012 On Request On Request
Non-Authorised Inventory information
1,178 pcs
1178 pcs On Request 1 On Request On Request N/A On Request On Request

NDC652P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDC652P Description

Short technical summary and product information.

The NDC652P from ON Semiconductor is a P-Channel Logic Level Enhancement Mode Field Effect Transistor. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.4A at 25°C.

 

This MOSFET utilizes a high-density DMOS technology for extremely low on-state resistance (Rds(on)), with a typical value of 0.09 Ohm at 10V Vgs and 3.1A Id. The gate threshold voltage (Vgs(th)) is typically -1.5V at 250µA.

 

Designed for surface mounting, the NDC652P comes in a SuperSOT™-6 package, also known as SOT-23-6 Thin or TSOT-23-6. It operates within a temperature range of -55°C to 150°C.

 

Key electrical characteristics include an input capacitance (Ciss) of 290 pF and a total gate charge (Qg) of 20 nC maximum. The maximum power dissipation is 1.6W.

NDC652P Quick Information

Product Type: MOSFET
Series: SuperSOT™-6
Canonical Name: NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDC652P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDC652P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDC652P Features

  • P-Channel Logic Level MOSFET
  • 30V Drain-Source Voltage
  • 2.4A Continuous Drain Current
  • Low On-Resistance (0.09 Ohm typical)
  • SuperSOT™-6 Surface Mount Package

NDC652P Applications

  • Low voltage applications
  • Notebook computer power management
  • Battery powered circuits
  • High-side switching

NDC652P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NDC652P?

The maximum drain-source voltage (Vdss) for the NDC652P is 30V.

What is the continuous drain current of the NDC652P?

The continuous drain current (Id) for the NDC652P is 2.4A.

What is the typical on-resistance of the NDC652P?

The typical on-resistance (Rds(on)) for the NDC652P is 0.09 Ohm at 10V Vgs and 3.1A Id.

What is the operating temperature range for the NDC652P?

The operating and storage temperature range for the NDC652P is -55°C to 150°C.

What package type is the NDC652P available in?

The NDC652P is available in a SuperSOT™-6 package, also referred to as SOT-23-6 Thin or TSOT-23-6.

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