| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,146 pcs
|
3146 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,329 pcs
|
1329 pcs | On Request | 1 | On Request | On Request | 0012 | On Request | On Request | |
|
1,178 pcs
|
1178 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDC652P from ON Semiconductor is a P-Channel Logic Level Enhancement Mode Field Effect Transistor. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.4A at 25°C.
This MOSFET utilizes a high-density DMOS technology for extremely low on-state resistance (Rds(on)), with a typical value of 0.09 Ohm at 10V Vgs and 3.1A Id. The gate threshold voltage (Vgs(th)) is typically -1.5V at 250µA.
Designed for surface mounting, the NDC652P comes in a SuperSOT™-6 package, also known as SOT-23-6 Thin or TSOT-23-6. It operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include an input capacitance (Ciss) of 290 pF and a total gate charge (Qg) of 20 nC maximum. The maximum power dissipation is 1.6W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NDC652P is 30V.
The continuous drain current (Id) for the NDC652P is 2.4A.
The typical on-resistance (Rds(on)) for the NDC652P is 0.09 Ohm at 10V Vgs and 3.1A Id.
The operating and storage temperature range for the NDC652P is -55°C to 150°C.
The NDC652P is available in a SuperSOT™-6 package, also referred to as SOT-23-6 Thin or TSOT-23-6.