| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,707 pcs
|
4707 pcs | On Request | 1 | On Request | On Request | 0311+ | On Request | On Request | |
|
680 pcs
|
680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDC632P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It features a drain-source voltage of 20V and a continuous drain current of 2.7A.
This MOSFET utilizes a high-density DMOS technology tailored to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. Key electrical characteristics include a gate threshold voltage of -1V (max) at 250µA and a static drain-source on-resistance as low as 0.14Ω at 2.7A and 4.5V Vgs.
Designed for low voltage applications such as notebook computer power management and battery-powered circuits, the NDC632P excels in high-side switching and low in-line power loss. It is supplied in a compact SuperSOT-6 surface mount package, providing superior thermal and electrical performance.
Key specifications include an input capacitance of 550pF, a total gate charge of 15nC, and operating temperatures ranging from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NDC632P MOSFET is 20V.
The continuous drain current (Id) for the NDC632P is 2.7A.
The NDC632P operates between -55°C and 150°C.
The NDC632P is supplied in a SuperSOT-6 package, also referred to as SOT-23-6 Thin or TSOT-23-6.
The maximum on-resistance (Rds On) for the NDC632P is 0.14Ω at a gate-source voltage of 4.5V and a drain current of 2.7A.