NDC632P The NDC632P is a P-Channel MOSFET from On Semiconductor with a 20V drain-source voltage and 2.7A continuous drain current. It is housed in a SuperSOT-6 package.
Mfr Part #:

NDC632P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDC632P is a P-Channel MOSFET from On Semiconductor with a 20V drain-source voltage and 2.7A continuous drain current. It is housed in a SuperSOT-6 package.
✓ Total Stock: 5,387 pcs
$ Price Range: $0.99

NDC632P Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,707 pcs
4707 pcs On Request 1 On Request On Request 0311+ On Request On Request
Non-Authorised Inventory information
680 pcs
680 pcs On Request 1 On Request On Request On Request On Request On Request

NDC632P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDC632P Description

Short technical summary and product information.

The NDC632P is a P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by On Semiconductor. It features a drain-source voltage of 20V and a continuous drain current of 2.7A.

 

This MOSFET utilizes a high-density DMOS technology tailored to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. Key electrical characteristics include a gate threshold voltage of -1V (max) at 250µA and a static drain-source on-resistance as low as 0.14Ω at 2.7A and 4.5V Vgs.

 

Designed for low voltage applications such as notebook computer power management and battery-powered circuits, the NDC632P excels in high-side switching and low in-line power loss. It is supplied in a compact SuperSOT-6 surface mount package, providing superior thermal and electrical performance.

 

Key specifications include an input capacitance of 550pF, a total gate charge of 15nC, and operating temperatures ranging from -55°C to 150°C.

NDC632P Quick Information

Product Type: MOSFET
Series: SuperSOT
Canonical Name: P-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

NDC632P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDC632P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDC632P Features

  • P-Channel logic level enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 2.7A continuous drain current capability.
  • Low on-resistance: 0.14Ω max @ 2.7A, 4.5V.
  • SuperSOT-6 surface mount package.

NDC632P Applications

  • Ideal for low voltage applications.
  • Suitable for battery powered circuits.
  • Used in notebook computer power management.
  • Features fast high-side switching.
  • Minimizes in-line power loss.

NDC632P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDC632P MOSFET?

The drain-source voltage (Vdss) for the NDC632P MOSFET is 20V.

What is the continuous drain current of the NDC632P?

The continuous drain current (Id) for the NDC632P is 2.7A.

What is the operating temperature range for the NDC632P?

The NDC632P operates between -55°C and 150°C.

What package type is the NDC632P MOSFET supplied in?

The NDC632P is supplied in a SuperSOT-6 package, also referred to as SOT-23-6 Thin or TSOT-23-6.

What is the maximum on-resistance of the NDC632P?

The maximum on-resistance (Rds On) for the NDC632P is 0.14Ω at a gate-source voltage of 4.5V and a drain current of 2.7A.

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