| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
138 pcs
|
138 pcs | On Request | 1 | On Request | On Request | 34 | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NDB6060L from On Semiconductor is a high-density N-Channel enhancement mode power MOSFET. It is engineered using DMOS technology to minimize on-state resistance and provide superior switching performance, making it suitable for demanding applications.
Key electrical characteristics include a drain-source voltage (Vdss) of 60V and a continuous drain current of 48A. The Rds On is specified at a maximum of 20mOhm at 24A and 10V gate-source voltage, with a typical value of 0.025 mOhm at 5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, allowing for low drive requirements and direct operation from logic drivers.
This MOSFET is designed to withstand high energy pulses in avalanche and commutation modes. It has a maximum junction temperature rating of 175°C and a total power dissipation of 100W at 25°C. The operating temperature range is -65°C to 175°C.
The NDB6060L is available in a TO-263-3, D²Pak package, suitable for surface mount applications. It is also described as Pb-Free and Halide Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NDB6060L is 60V.
The NDB6060L MOSFET has a continuous drain current rating of 48A.
The Rds On (Max) for the NDB6060L is 20mOhm at 24A drain current and 10V gate-source voltage.
The operating temperature range for the NDB6060L is -65°C to 175°C.
The NDB6060L MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The NDB6060L is RoHS3 Compliant.