| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NDB6020P is a P-Channel Logic Level Enhancement Mode power field-effect transistor designed using a high-density DMOS technology. This technology minimizes on-state resistance and provides superior switching performance.
Key electrical specifications include a drain-source voltage (Vdss) of -20V, a continuous drain current (Id) of -24A at 25°C, and a maximum power dissipation (Pd) of 60W at 25°C. The static drain-source on-resistance (Rds(on)) is as low as 50mOhm at 12A and 4.5V gate-source voltage. The operating temperature range is -65°C to 175°C.
This MOSFET is suited for low-voltage applications such as automotive, DC/DC converters, PWM motor controls, and battery-powered circuits requiring fast switching and low power loss. It is available in a TO-263-3, D²Pak surface mount package.
Features include a high-density cell design for low Rds(on), a rugged internal source-drain diode, and a maximum junction temperature rating of 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-24A
50mOhm
-65°C to 175°C
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS3 Compliant