| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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553 pcs
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553 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The NCV57256DR2G from On Semiconductor is a high-current, two-channel isolated IGBT/MOSFET gate driver. It provides 2.5 or 5 kVrms internal galvanic isolation from input to each output, with functional isolation between the two output channels. The device supports a wide range of bias voltages, accepting 3.3 V to 20 V on the input side and up to 32 V on the output side.
Key features include high peak output current capabilities of up to ±6.5 A, configurable operation as a dual low-side, dual high-side, or half-bridge driver, and programmable overlap or dead-time control for system design convenience. It also includes a Disable pin for power sequencing and IGBT/MOSFET gate clamping during short circuits. The driver boasts short propagation delays with accurate matching and tight UVLO thresholds.
This gate driver is available in a 16-SOIC package and is suitable for demanding applications such as EV chargers, motor control, uninterruptible power supplies (UPS), industrial power supplies, solar inverters, and other automotive applications. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Mounting is via surface mount technology. The operating temperature range is -40°C to 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57256DR2G offers peak output currents of 3.5 A and 6.5 A.
The NCV57256DR2G provides 5 kVrms of internal galvanic isolation.
The operating temperature range for the NCV57256DR2G is -40°C to 125°C.
This gate driver is available in a 16-SOIC package.
Yes, the NCV57256DR2G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.