NCV57256DR2G The On Semiconductor NCV57256DR2G is an isolated dual-channel gate driver designed for IGBT and MOSFET devices. It offers high peak output current and robust isolation.
Mfr Part #:

NCV57256DR2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NCV57256DR2G is an isolated dual-channel gate driver designed for IGBT and MOSFET devices. It offers high peak output current and robust isolation.
Total Stock: 1,553 pcs
$ Price Range: $2.62

NCV57256DR2G Available from 2 distributors

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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
553 pcs
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NCV57256DR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Common Mode Transient Immunity (Min)
Current
Halogen Free
Lead Spacing
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Supplier Device Package
Technology
Voltage
Working Voltage

NCV57256DR2G Description

Short technical summary and product information.

The NCV57256DR2G from On Semiconductor is a high-current, two-channel isolated IGBT/MOSFET gate driver. It provides 2.5 or 5 kVrms internal galvanic isolation from input to each output, with functional isolation between the two output channels. The device supports a wide range of bias voltages, accepting 3.3 V to 20 V on the input side and up to 32 V on the output side.

 

Key features include high peak output current capabilities of up to ±6.5 A, configurable operation as a dual low-side, dual high-side, or half-bridge driver, and programmable overlap or dead-time control for system design convenience. It also includes a Disable pin for power sequencing and IGBT/MOSFET gate clamping during short circuits. The driver boasts short propagation delays with accurate matching and tight UVLO thresholds.

 

This gate driver is available in a 16-SOIC package and is suitable for demanding applications such as EV chargers, motor control, uninterruptible power supplies (UPS), industrial power supplies, solar inverters, and other automotive applications. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

Mounting is via surface mount technology. The operating temperature range is -40°C to 125°C.

NCV57256DR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCV57256DR2G Isolated Dual Channel IGBT/MOSFET Gate Driver
Subcategory: Isolator

NCV57256DR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NCV57256DR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCV57256DR2G Features

  • High peak output current up to 6.5A.
  • 2.5 or 5 kVrms internal galvanic isolation.
  • Configurable as dual low-side or high-side.
  • Programmable dead time control included.
  • 16-SOIC surface mount package.

NCV57256DR2G Applications

  • Ideal for EV charger designs.
  • Suitable for motor control systems.
  • Used in uninterruptible power supplies.
  • Applicable for industrial power supplies.
  • Designed for solar inverter applications.

NCV57256DR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the peak output current for the NCV57256DR2G?

The NCV57256DR2G offers peak output currents of 3.5 A and 6.5 A.

What is the isolation voltage of the NCV57256DR2G gate driver?

The NCV57256DR2G provides 5 kVrms of internal galvanic isolation.

What is the operating temperature range for this gate driver?

The operating temperature range for the NCV57256DR2G is -40°C to 125°C.

What package type is the NCV57256DR2G available in?

This gate driver is available in a 16-SOIC package.

Is the NCV57256DR2G RoHS compliant?

Yes, the NCV57256DR2G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NCV57256DR2G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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