NCV57091BDWR2G The On Semiconductor NCV57091BDWR2G is an isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5 kVrms internal galvanic isolation.
Mfr Part #:

NCV57091BDWR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NCV57091BDWR2G is an isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5 kVrms internal galvanic isolation.
Total Stock: 1,000 pcs
$ Price Range: $2.62

NCV57091BDWR2G Available from 1 distributor

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NCV57091BDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Approval Agency
Automotive Grade
Common Mode Transient Immunity (Min)
Current
Halogen Free
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Supplier Device Package
Tape & Reel
Technology
Voltage

NCV57091BDWR2G Description

Short technical summary and product information.

The On Semiconductor NCV57091BDWR2G is a single-channel, isolated high-current IGBT/MOSFET gate driver designed for high power applications. It provides 5 kVrms internal galvanic isolation, ensuring system efficiency and reliability.

 

Key electrical specifications include a high peak output current of +6.5 A/−6.5 A and a wide input bias voltage range from 3.3 V to 20 V. The device features short propagation delays with accurate matching and accommodates IGBT/MOSFET gate clamping during short circuits. It also offers an active Miller clamp for versions A/D/F.

 

This gate driver is available in a wide-body SOIC-8 package and is designed for surface mount applications. Its operating temperature range is -40°C to 125°C. The NCV57091BDWR2G is suitable for motor control, uninterruptible power supplies (UPS), industrial power supplies, and solar inverters.

NCV57091BDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: On Semiconductor NCV57091BDWR2G Isolated High Current IGBT/MOSFET Gate Driver
Subcategory: Isolators - Gate Drivers

NCV57091BDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NCV57091BDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCV57091BDWR2G Features

  • High peak output current of 6.5A.
  • 5 kVrms internal galvanic isolation.
  • Wide logic input voltage range.
  • Surface mount 8-SOIC package.
  • Suitable for high power applications.

NCV57091BDWR2G Applications

  • Ideal for motor control circuits.
  • Used in uninterruptible power supplies.
  • Suitable for industrial power supplies.
  • Applicable in solar inverter systems.

NCV57091BDWR2G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the output current of the NCV57091BDWR2G?

The NCV57091BDWR2G has a high peak output current of +6.5 A/−6.5 A.

What is the isolation voltage for this gate driver?

This gate driver features 5 kVrms internal galvanic isolation.

What is the operating voltage range for the NCV57091BDWR2G?

The operating voltage range is from 0 V to 32 V.

What is the operating temperature range?

The operating temperature range is -40°C to 125°C.

What package type is the NCV57091BDWR2G available in?

It is available in an 8-SOIC package.

Is the NCV57091BDWR2G RoHS compliant?

Yes, the NCV57091BDWR2G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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