| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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The NCV5702DR2G from On Semiconductor is a high-performance, standalone IGBT gate driver suitable for high power applications such as solar inverters and motor control. This device offers a cost-effective solution by minimizing the need for external components.
Key electrical specifications include a high current output of +4/-6 A at IGBT Miller Plateau Voltages and a wide voltage range up to 20V. It operates within a temperature range of -40°C to 125°C (TA). The driver provides accurate 5.0V reference output and separate high and low driver outputs (VOH and VOL) for design flexibility.
Device protection features include Active Miller Clamp, accurate UVLO, EN input, DESAT protection, and an active open-drain FAULT output. The NCV5702DR2G is designed for direct interface with digital isolators, opto-couplers, or pulse transformers for isolated drive, and offers logic compatibility for non-isolated drive.
Packaged in a 16-pin SOIC (16-SOIC (0.154", 3.90mm Width)) with surface mount mounting type, this component is ideal for space-constrained designs requiring robust gate driving capabilities for IGBTs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV5702DR2G has an operating temperature range from -40°C to 125°C (TA).
The NCV5702DR2G is supplied in a 16-SOIC (0.154", 3.90mm Width) package.
The maximum voltage for the NCV5702DR2G is 20V.
The NCV5702DR2G has a maximum current of 4A and a minimum current of -6A for IGBT Miller Plateau Voltages.
The logic voltage for the NCV5702DR2G ranges from a minimum of 0.75V to a maximum of 4.3V.
The NCV5702DR2G has typical rise times of 9.2 ns and 7.9 ns.
The NCV5702DR2G is designed to drive IGBT gates.